TIP29 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.0A,40-100V,30W)

TIP29, TIP29A, TIP29B, TIP29C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
WIN TYP MAX
TIP29
40
Collector-emitter
TIP29A
60
(BR)CEO breakdown V0|tage
>C= 30 mA
,B = 0
J|p29B
80
(see Note 5)
T|p2gc
100
VCE= 80V
VBE = 0
TIP29
0.2
Collector-emitter
VCE = 100V
VBE = 0
TIP29A
0.2
CES cut-off current
VCE = 120V
VBE = 0
TIP29B
0.2
VCE = 140 V
VBE = 0
TIP29C
0.2
Collector cut-off
VCE= 30V
IB = 0
TIP29/29A
0.3
|CEO current
VCE = 60 V
IB = 0
TIP29B/29C
0.3
Emitter cut-off
VEB= 5V
lc = 0
1
'EBO current
Forward current
40
hpc _{transfer ratio}
Vc!= 4V
!c = °'?A
(see Notes 5 and 6) ₁₅
75
Collector-emitter
IB= 125mA
lc = 1 A
(see Notes 5 and 6)
0.7
CE(sat> saturation voltage
Base-emitter
VCE = 4 V
|C = 1 A
(see Notes 5 and 6)
1.3
BE voltage
Small signal forward
hfp
VCE= 10V
IC = 0.2A
f=1kHz
20
current transfer ratio
Small signal forward
hfp
VCE= 10V
I0 = 0.2A
f = 1 MHz
3
current transfer ratio
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 us, duty cycle < 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
R9JC
ReJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
4.17 °c/w
62.5 °c/w
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS t
ton Turn-on time
lc=1A
lB(on) = 0.1A
lB<off) = -0-1 A
toff Turn-off time
VBE(off) = -4.3 V
RL = 30 0
tp = 20 us, dc < 2%
t _{Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.}
MIN TYP MAX UNIT
0.5
us
2
us