TIP130 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,60-100V,70W)

TIP130/T1P131/TIP132/TIP135/TIP136/T1P137
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
1.78
Max
63.5
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEO Collector Cut-off
Current (le = 0)
VCE = Half Rates VCEO
ICBO Collector Cut-off
Current (IB = 0)
VCB = Half Rates VCBO
IEBO Emitter Cut-off Current VEB = 5 V
(lc = 0)
VcEO(sus)* Collector-Emitter
Sustaining Voltage
(I8= 0)
Ic = 30 mA
forTIP130/135
forTIP131/136
for TIP132/137
VcE(sat)* Collector-Emitter
Saturation Voltage
Ic = 4 A
Ic = 6 A
IB = 16 mA
IB = 30 mA
VBE(OH)* ^{Base-Emitter Voltage Ic = 4 A}
VCE = 4 V
hFE* DC Current Gain
Ic = 1 A
Ic = 4 A
1 For PNP types voltage and current valuesjire negativ^.
VCE = 4 V.
VCE = 4 V
Min. Typ.
60
80
100
500
1000
Max.
0.5
0.2
5
2
4
2.5
15000
Unit
mA
mA
mA
V
V
V
V
V
V
DIM
mm
Inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
. 0.181
C
1.23
1.32
0.048
0.051
D
2.40
272
0.094
0.107
D1
1.27
0,050
E
0.49
0.70
0.019
0,027
F
0.61
0.88
0.024 ,
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
295
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
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