T2700 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – HIGH VOLTAGE 6-A SILICON TRIACS

T2700 Series
ELECTRICAL CHARACTERISTICS
At Maximum Ratings and at Indicated Case Temperature (Tc) Unless Otherwise Specified
LIMITS
CHARACTERISTIC
Peak Off-State Current:"
Gate open, T, = 125°C, VOROU = Max. rated value
Maximum On-State Voltage:'
For IT • 30A (peak) T0 = 25°C
DC Holding Current:*
Gate open, Initial principal current = ISO mA (DC). V0 = 12V:
TC = 25°C
SYMBOL
For All Types
Unless Otherwise Specified
Mln.
Typ.
Max.
UNITS
IDROM
0.1
4
mA
VTM
—
1.8
2.25
V
IHO
-
15
30
mA
See Fig. &
Critical Rate-of-Rise of Commutation Voltage:"
For VD = VDHOU. !TmM31 - 6 A, Commutating
di/dt - 3.2 A/ms. and gate unenergized
AtTc = -i-100°C
dv/dt
3
10
V///S
Critical Rate of Rise of Off-State Voltage:*
For VD = VDnoM, exponential voltage rise, and gate open
AtTc = 125°C
T2500B
T2500D
. ..
T2500M
T2500N
dv/dt
30
150
20
15
100
70
-
V///S
10
50
DC Gate-Trigger Currenti't
For v0 = 12 volts (dc), RL « 30 fl,
Tc = +25° C, and Specified Triggering Mode:
III" Mode: V)jm negative, VG negative , . ...,,.,.
l~ Mode:
VMTJ positive VG negative
IGT
IM+ Mode: V^^-j negative, VQ positive
For other case temperatures
15
25
20
30
25
40
mA
25
40
Sei Figs. 7 & 8
DC Gate-Trigger Voltage:* t
For VD = 1 2 V(DC), RL = 30 fl
TC = 25°C
For VD = VDTOM, RL = 125 O, Tc ^ 12S"C
1
2.2
VOT
See Fig. 9
V
0.2
Gate-Controlled Turn-On Time:
(Delay Tims t Rise Time)
For VD - V,*™. la = 160 mA, tr = 0.1 us,
iT = 10 A (peak) Tc = 25°C (See Fig 15)
Thermal Resistance:
Junction-to-Case (Steady-State)
Junction-to-Case (Transient)
V
2.2
/is
RUA
4
"C/W
iee Fig. 10
'For either polarity of main terminal 2 voltage (V,,T2) with reference to main terminal 1.
tFor either polarity of gate voltage (VQ) with reference to main terminal 1.