SD4590 Datasheet, PDF (2/3 Pages) STMicroelectronics – RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION

SD4590
ELECTRICAL SPECIFICATION (Tcase = 25 °C)
STATIC
Symbol
BVcBO
BVcEO
Ic = 100 mA
Ic = 100 mA
BVCER
BVEBO
ICEO
ICEO
IEBO
IEBO
hpE
IC = 100 mA
Ic = 50 mA
VCE = 26 V
VCE = 10 V
VBE = 1 V
VBE = 2.5V
VCE = 5V
TESTED PER SIDE
Parameter
VBE = 0 V
IB = 0 mA
RBE = 80 il
Ic = 0 mA
VBE = 0 V
VBE = 0 V
VCE = 0 V
VCE = 0 V
lc = 6 A
Mm.
65
28
. 33
3.5
25
Typ.
80
30
40
4.0
45
Max.
10
0.5
0.1
3
120
Unit
V
V
V
V
mA
mA
mA
mA
REF 1016365E
DYNAMIC
Symbol
COB
Parameter
f = 1 MHz
VCB = 26 V
for information only - this part is collector matched
Min. Typ. Max. Unit
75
pF
DYNAMIC (CW)
Symbol
PIN
POUT
GP
nc
PldB
OVD
Parameter
f = 900 MHz VCE = 26 V ICQ= 2x200 mA
f = 900 MHz VCE = 26 V ICQ= 2x200 rnA
f = 900 MHz VCE = 26 V ICQ= 2x200 mA
f = 900 MHz VCE = 26 V ICQ= 2x200 mA
f = 900 MHz VCE = 26 V ICQ = 2x200 mA
f = 900 MHz VCE = 26 V ICQ= 2x200 mA
Set POUT = 150 W PEP; Increase PIN 3dB
POUT = 150 W
PIN = 21 W
POUT = 1 S O W
POUT = 150 W
Min. Typ. Max. Unit
21
W
150 175
W
8.5
9.5
dB
50
55
%
150
160
W
No Degratation in Device
Performance
DYNAMIC (Two-Tone)
Symbol
*GP VCE = 26 V
Parameter
ICQ = 2x200 mA
POUT = 150 W PEP
*r|c VCE = 26 V
ICQ= 2x200 mA
POUT = 150 W PEP
*IMD3 VCE = 26 V
ICQ = 2x200 mA
POUT = 1 50 W PEP
'Load VCE = 26 V
ICQ = 2x200 mA
POUT = 1S O W PEP
Mismatch VSWR = 5:1 MIN @ All Phase Angles
*OVD VCE = 26 V
ICQ= 2x200 mA
Set POUT = 150 W PEP; Increase P!N 3dB
Noteif, = 900.00 MHz
k =900.10 MHz
Min. Typ. Max. Unit
8.5
9.5
dB
30
35
%
-32 -28 dBT
No CJegratation in De vice
Perfor mance
No Degratation in Device
Performance