SD241 Datasheet, PDF (2/2 Pages) Microsemi Corporation – Schottky Rectifier

VOLTAGE RATINGS PER JUNCTION
40CDQ020
40COQ030
40COQ036
40CDQ040
40CDQ045
Part Numbers
S0241
60CDQ020
60CDQ030
60CDQ035
COCDQ040
•60COQ045 -
VRWM ~ Max-
Working Peak _
Reverie Voltage (V) ©
20
30
36©
40
46
Repetitive Peak
Reverse Voltage I V)©
(t« * 200 ns Max.)
24
36
42©
48
54
VR - Max. Direct
Reverse Voltage (V)©
20
30
36
40
45
ELECTRICAL SPECIFICATIONS
40CDQ SD241 60CDQ
IQ
Max, averagt output current
from center tap circuit
40
60
60
IpSIV) Max. peak one cycle, non-
repetitive surge current,
per junction
36
' 64
64
.380
475
400
BOO
45E
670
478
606
Units
A
Condition!
180° conduction, rectangular waveform, TQ •> -40 to
143°C for 40CDQ, Tc - -40 to 1 20°C for 60CDQ.
180° conduction, sinusoidal waveform, TC « -40 to
141 °C for 40CDQ, Tc - -40 to 1 16°C for 60CDQ.
50 Hz half cycle sine wave e .,_ .,,__ __., ,...w ,Mj
or 6 m, rac«an,u,ar pu,,a, ™S*SS32S?£*
60 Hz half cycle sine wave
or 6 ms rectangular pulse.
VRWM applied,
50 Hz
"so Hz
With VRWM - 0 following (urge.
Initial Tj-175uC.
I2t
Max. I2t for fuilng, per
Junction
I2t Max. 1't for individual
function fusing, per Junction
730
665
1030
940 '
1140
1040
1610
1470
A2,
t-IOmj. Rated VRWM followingsurge,
t - 8.3ms. initial Tj-17S°C.
t-10ms. VRWM following surge *• 0,
A2,
t - 8.3 mi. Initial Tj=176°C.
|2\/T Max. I2 \A"for Individual ©
junction fusing, per junction
VpM Max. peak forward voltaga
per junction
IRM Max. peak reverse current,
per junction
10,326
16,130
0.70
0.91
0.74
0.82
1.09
0.92
10
. 20
A*V7 .t-0.1 tolOmj, Tj- 17B°C, VRWM = 0 following surge.
IFM - 20A peak for 40CDQ, IFM - 30A
Tj = 26°C r«Kfor60CDQ«ndSD241 FM
V
Tj - 2G°C R,nd IF(AV) (40A peak for 40CDQ, 60A
-r .-.cor- peak for UUUUU and 81)241 )
Tj-175 c IBOO rectangular wave.
T, - 2B°C
mA
Tj-126"C RM rateaVRWM
IBBM- Max. repetitive peak
MHM' reverie current
C,
Max. capacitance,
per junction
2.0
1400
A
Tc - 2S°C, L, > 2 pi rectangular pulse, f - 1 kHz. ©
see fig. 11 for ten circuit.
Tc = 25°C, VR - 6 Vdc (Test signal In the range of
PF
100 kHz to 1 MHz)
dv/dt Mex. rate of application of
reverse voltage, per junction
1000
V/Vs
TC=26°C,VRM- rated VHWM
THERMAL-MECHANICAL SPECIFICATIONS
Tj
Max. operating junction
temperature range
-55 to 176
oo
T|tg Max. storage temperature
range
RthJC Max. thermal resistance.
Junction-to-case,
DC operation
Max. composite thermal
resistance, junctfon-to-ceie,
DC operation
-55 to 176
1.4
0.7
• <>C
Based on power dissipated in one junction, both
Junctions operating.
Bated on power dissipated In both junctions.
R,hCs Thermal resistance,
casa-to-sink
0,2
deg, C/W Mounting surface Hot, smooth and greaied.
wt
Approximate weight
12.6 (0.46)
g (02.)
Cite Style
- TO-204AA
(TO-3)
TOatMAE
(Modified
TO-3)
Terminals 1 end 2: Anodes 1 and 2
Case: Common Cathodes
© Tc - -55 to 172°C, 180° conduction
© TC *• 0 to 172°C, 180° conduction © Tc - -65 to 182°C.
© For SD241 rated
© I2t for time t^- I2 V7 • \/t]|.
© For ten circuit refer to Fig. 11.
35V @ Tj - 150°C