SD214 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – High-Speed Analog N-Channel DMOS FETs

SD210/SD212/SD214
ABSOLUTE MAXIMUM RATINGS
Drain Current
50mA
Total Device Dissipation at 25°C Case Temperature . . . 1.2W
Storage Temperatue Range
-65°C to +200°C
Lead Temperature (1/16" from case for 10 sec.)
300°C
Operating Temperature Range
-55°C to +125°C
PARAMETER SD210 SD212 SD214 UNIT
VDS ^{Drain-to-Source} +30 +10 +20 Vdc
VSD Source-to-Drain +10 +10 +20 Vdc
VDB Drain-to-Body +30 ⁺¹⁵ +25 Vdc
VSB
Source-to-Body +15
+15
+25
Vdc
VGS Gate-to-Source ±40 +40 ±40 Vdc
VGB Gate-to-Body
±40 +40 ±40 Vdc
VGD Gate-to-Drain ±40 ±40 ±40 Vdc
DC CHARACTERISTICS (TA = 25°C, unless otherwise specified)
SYMBOL
PARAMETER
BREAKDOWN VOLTAGE
SD210
SD212
SD214
UNITS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
TEST CONDITIONS
BVos
Drain-to-Source
BVso
Source-to Drain
BVDB
Drain-to-Body
BVss
Source-to-Body
LEAKAGE CURRENT
30 35
10 25
10
15
15
10 25
10
15
15
20 25
20
25
25
VGS = VBS = OV, lo = 10nA
VGS = VBS = -5V, Is = 1 0nA
V _{VGD = VBD = -5V, lo = 10nA}
VGB = 0V, source OPEN, ID = 1 0nA
VGB = 0V, drain OPEN, Is = 10nA
IDS (OFF) Drain-to-Source
Iso(OFF) Source-to-Drain
1 10
1 10
1 10
1 10
1 10
1 10
VGs = VBS = -5V,VDS = +10V
VGS = VBS = -5V, VDS = +20V
nA _{VGS = VBD= -5V, VSD = +10V}
VGS = VBD = -5V, VSD = +20V
IGBS
Gate
0.1
0.1
0.1
VDB = VSB = 0V, VGS = ±40V
VT
Threshold Voltage 0.5 1.0 2.0 0.1 1.0 2.0 0.1 1.0 2.0 V VDS = VGS= VT, Is = 1 nA, VSB = 0V
50 70
50 70
50 70
ID = 1 .OmA, VSB = 0, VGS = +5V
ros(ON)
Drain-to-Source
Resistance
30 45
23
19
30 45
23
19
30 45
ID = 1.0mA, VSB = 0, VGS = +10V
23
Q _{ID = 1.0mA, VSB = 0, VGS= +15V}
19
ID = 1 .OmA, VSB = 0, VGS = +20V
17
17
17
ID = 1 .OmA, VSB = 0, VGS = +25V
AC ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
SD210
SD212
SD214
UNITS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
gfs
Forward
Transconductance
10
15
10 15
10 15
ms
SMALL SIGNAL CAPACITANCES
C(GS+GD+GB) Gate Node
2.4 3.5
2.4 3.5
2.4 3.5
C(GD+DB)
C(GS+SB)
Drain Node
• Source Node
1.3 1.5
3.5 5.5
1.3 1.5
3.5 5.5
1.3 1.5
PF
3.5 5.5
COG
Reverse Transfer
0.3 0.5
0.3 0.5
0.3 0.5
TEST CONDITIONS
VDS = 1 0V, VSB = 0V,
ID = 20mA, f = 1kHz
VDS = 10V, f = 1MHz
VGS = VBS = -1 5V