RFP2N08 Datasheet, PDF (2/2 Pages) Intersil Corporation – 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs

Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified
RFP2N08
RFP2N10
UNITS
Drain to Source Voltage (Note 1)
...............................
VDSS
80
100
V
Drain to Gate Voltage (RGS = 1Mfl) (Note 1)
......................
VDGR
80
100
V
Continuous Drain Current
........................................
IQ
2
2
A
Pulsed Drain Current (Note 3)
...................................
IDM
5
5
A
Gate to Source Voltage
.......................................
VGS
±20
±20
V
Maximum Power Dissipation
....................................
Prj
25
25
W
Linear Derating Factor
..........................................
0.2
0.2
W/°C
Operating and Storage Temperature
.........................
Tj, TSTG "55 to 150
-55 to 150
°C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
.......................
T|_
300 .
300
°C
Package Body for 10s, See Techbrief 334
.......................
Tpkg
260
260
°C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
= 25°Cto 125°C.
Electrical Specifications Tc = 25°C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BVoss ^{ID = 250nA, VGS = 0}
RFP2N10
100
RFP2N08
80
Gate Threshold Voltage
Zero-Gate Voltage Drain Current
VGS(TH) VGS = VDS. ID = 250^A (Figure 8)
2
IDSS
VDS = Rated BVDSS, Tc = 25°C
-
VDS = 0-8 x Rated BVDSS, Tc = 125°C -
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
IGSS
VGS = ±20V, VDS = 0
-
rDS(ON) ^{ID = 2A, VGS= 10V (Figures 6,7)}
-
VDS(ON) ^{ID = 2A,VGS = 10V}
-
td(ON) ^{ID = 1A, VDD = sov, RG = son,}
-
tr
(Figures 10, 11, 12)
-
'd(OFF)
-
tf
-
CISS
VGS = 0V, VDS = 25V, f =1MHz
-
coss
-
CRSS
-
R6JC
-
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage (Note 2)
VSD ISD = 2A
-
Diode Reverse Recovery Time
trr
ISD = 2A, dlSD/dt = 50A/|is
-
NOTES:
2. Pulse test: pulse width < 300^3, duty cycle < 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
TYP MAX UNITS
-
-
V
-
-
V
-
4
V
-
1
HA
-
25
^A
- ±100 nA
-
1.05 n
-
2.1
V
17
25
ns
30
45
ns
30
45
ns
17
25
ns
-
200 PF
-
80
PF
-
25
pF
-
5 °C/W
TYP
100
MAX UNITS
1.4
V
-
ns