RFP25N05 Datasheet, PDF (2/2 Pages) Intersil Corporation – 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET

RFP25N05
Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified
RFP25N05
UNITS
Drain to Source Voltage (Note 1 )
..........................................
VDSS
50
V
Drain to Gate Voltage
50
V
Gate to Source Voltage
±20
V
Continuous Drain Current
Pulsed Drain Current (Note 3)
..................................................
..............................................
ID
25
A
IDM
Refer to Peak Current Curve
A
Pulsed Avalanche Rating
.................................................
EAS
Refer to UIS Curve
Maximum Power Dissipation
Linear Derating Factor
Operating and Storage Temperature
...............................................
Prj
.......................................................
....................................
Tj, TSTG
72
0.48
-55 to 175
W
w/°c
°c
Maximum Temperature for Soldering
Leads at0.063in (1.6mm) from Case for 10s
..................................
T|_
300
°c
Package Body for 10s, See Techbrief 334
..................................
Tpkg
260
°c
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
= 25°Cto150°C.
Electrical Specifications Tc = 25°C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
WIN
TYP
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS ID = 250nA, VGS = 0V (Figure 1 1 )
50
VGS(TH) VGS = VDS. 'D = 250mA (Figure10)
2
'DSS
VDS = Rated BVDSS, VGS = 0V
-
VDS = °8 x Rated BVDSS,TC = 150°C
-
!GSS
VGS = ±20V
-
rDS(ON) ^{ID = 25A, VGS = 10V (Figure 9)}
-
'ON
VDD = 25V, ID =12.5A, RL = 2.0Q,
-
td(ON)
VQS- iov, RQ - 10^Q
(Figure 13)
-
tr
-
'd(OFF)
-
tf
-
1OFF
-
QG(TOT) ^{VGS = 0V to 20V VDD = 4ov,}
-
ID - 25A, RL = 1.6JJ
°.G(10) ^{VGS = OVto 10V} _{'g(REF) = 0.75mA}
-
QG(TH) VGS =ov to 2V
(Figure 13)
-
CISS VDS =25V- VGS = ov,
-
f = 1MHz
coss _{(Figure 12)}
-
CRSS
-
Rejc
(Figure 3)
-
RejA
-
-
-
-
-
-
-
-
14
30
45
22
-
-
-
-
1075
350
100
-
-
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
Source to Drain Diode Voltage (Note 2)
VSD ISD = 25A
-
-
Reverse Recovery Time
tRR
ISD = 25A, dlSD/dt = 100A/HS
-
-
NOTES:
2. Pulse test: pulse width < 300|j.s, duty cycle < 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve
MAX
-
4
1
25
±100
0.047
60
-
-
-
-
100
80
45
3
-
-
-
2.083
80
UNITS
V
V
HA
uA
nA
n
ns
ns
ns
ns
ns
ns
nC
nC
nC
PF
PF
pF
°C/W
°c/w
MAX
1.5
125
UNITS
V
ns