RFP10N12 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – N-Channel Enhancement-Mode Power Field-Effect Transistors

RFM10N12, RFM10N15, RFP10N12, RFP10N15
ELECTRICAL CHARACTERISTICS At Case Temperature (Tc) = 25° C unless otherwise specified
CHARACTERISTICS
SYMBOL
TEST
CONDITIONS
LIMITS
RFM10N12
RFM10N15
RFP10N12
RFP10N15
MIN. MAX. MIN. MAX.
UNITS
Drain-Source Breakdown Voltage
BVoss
ID = 1 mA
Vos = 0
120
-. 150
-
V
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On Voltage
Static Drain-Source On Resistance
Vasuiu
loss
loss
Vos(on)'
ros(on)'
Vfls = VM
ID = 2 mA
2
4
2
4
V
Vos = 100V
VM = 120V
: ^-
1
1
Tc= 125° C
Vos = 100 V . -
50
-
M
VDS.= 120V
50
Vas = ± 20 V
VDS = O
-
100
-
100
nA
ID = 5 A
-
1.6
-
1.5
Vas = 10 V
ID = 10 A
Vas = 10 V
-
4
„₄
V
ID = 5 A
Vas = 10 V
-
0.3
- 0,3
n
Forward Transconductanee
Vos = 10 V
9..'
In = 5 A
2
-
2
- mho
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C{U
COM
Cn»
td(on)
t,
Woff)
1i
V[>s=25 V
650
—
650
V05 = 0 V
- 230
230
pF
f = 1MHz,
60
60
VuD=75 V
40(typ.) 60 40(typ.) 60
lo = 5 A
165(typ.) 250 165(typ.) 250
ns
R,.n = R0, = 50 n 90(typ.) 135 90{(yp.) 135
Vos = 10 V 90(typ.) 135 90(typ.) 135
Thermal Resistance
Junction-to-Case
RffJC
RFM10N12,
RFM10N15
RFP10N12,
RFP10N15
-
1.67
- 1.67
•C/W
- 2,083 - 2.083
'Pulsed: Pulse duration = 300 pa max.. duty cycle = 2%.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
CHARACTERISTIC
Diode Forward Voltage
Reverse Recovery Time
SYMBOL
V5n
t.
TEST
CONDITIONS
lso*5 A
IF=4A
diF/dt=100A//js
LIMITS
RFM10N12
RFP10N12
RFM10N15
RFP10N15
MIN.
MAX.
MIN.
MAX.
—
1.4
—
1.4
200(typ)
200(typ)
UNITS
V
ns