RFL2N05 Datasheet, PDF (2/2 Pages) Intersil Corporation – 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs

Absolute Maximum Ratings Tc = 25°c, Unless otherwise Specified
Drain to Source Voltage (Note 1 )
...............................
VDSS
Drain to Gate Voltage (RGS = 1M£i) (Note 1)
......................
VDGR
Gate to Source Voltage
.......................................
VGS
Drain Current, RMS Continuous
...................................
ID
Pulsed
....................................................
IDM
Maximum Power Dissipation
....................................
PD
Linear Derating Factor
..........................................
Operating and Storage Temperature Range
...................
Tj, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief 334
.......................
.......................
TL
Tpkg
RFL2N05
50
50
±20
2
10
8.33
0.0667
-55 to 150
300
260
RLF2N06
60
60
±20
2
10
8.33
0.0667
-55 to 150
300
260
UNITS
V
V
V
A
A
W
W/ °C
°C
°C
°C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device- This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
= 25°Cto125°C.
Electrical Specifications Tc = 25°C, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
RFL2N05
SYMBOL
TEST CONDITIONS
BVDSS ID = 250nA, VGS = o
RFL2N06
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH) VGS =VDS. ID= 250|iA, (Figure 8)
IDSS
VDS = 0.8 x Rated BVDSS,
Tc = 25°C
TC = 125°C
'GSS ^{VGS = ±2ov, VDS = °}
VDS(ON) ^{ID = 1A,VGS=10V}
ID = 2A,VGS =10V
ID = 4A,VGS = 15V
rDS(ON) ^{ID = 1A, VGS = 10V, (Figures 6, 7)}
9fs
td(ON)
tr
lD = 1A, VDS= 10V, (Figure 10)
ID = 1A,VDD = 30V,RGS = son,
VGS ~ 1 0V, (Figures 11, 12, 13)
td(OFF)
tf
CISS
COSS
CRSS
VGS = ov, VDS = 25V,
f - 1MHz, (Figure 9)
R9JC
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
Diode Reverse Recovery Time
V
NOTE:
2. Pulse test: pulse width < 300|^s, duty cycle < 2%.
ISD = 1A
ISD = 2A, d!SD/dt = SOA/ns
MIN TYP MAX
50
_
_
60
-
-
2
-
4
-
-
1
-
-
25
-
-
±100
-
-
0.95
-
-
2.0
-
-
4.8
-
-
0.95
400
-
-
-
6
15
-
14
30
-
16
30
-
30
50
-
-
200
-
-
85
-
-
30
-
-
15
MIN
TYP
MAX
-
-
1.4
-
100
UNITS
V
V
V
HA
HA
nA
V
V
V
n
s
ns
ns
ns
ns
PF
PF
PF
°C/W
UNITS
V
ns