RFH25P08 Datasheet, PDF (2/2 Pages) Intersil Corporation – -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs

Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified
Drain to Source Voltage (Note 1 )
...................................
Drain to Gate Voltage (RGS = 20ki2) (Note 1 )
........................
Continuous Drain Current
...........................................
Vps
VDGR
Ip
RFH25P08
RFK25P08
-80
-80
-25
RFH25P10
RFK25P10
-100
-100
-25
UNITS
V
V
A
Pulsed Drain Current (Note 3)
....................................
IQM
Gate to Source Voltage
..........................................
VGs
Maximum Power Dissipation
........................................
PQ
Linear Derating Factor
.............................................
Operating and Storage Temperature
.............................
Tj, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
..........................
Package Body for 10s, See Techbrief 334 (forTO-218AC) ..............
TL
Tpkg
-60
±20
150
1.2
-55 to 150
300
260
-60
±20
150
1.2
-55 to 150
300
260
A
V
W
W/°C
°C
°C
°C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
= 250Cto125°C.
Electrical Specifications Tc = 25°C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFH25P08, RFK25P08
BVDSS ID = 250nA, VGS = 0V
RFH25P10, RFK25P10
Gate Threshold Voltage
Zero Gate Voltage Drain Current
VGS(TH)
IDSS
VGS = VDS. ID= 250p,A, (Fi9ure8)
VDS = Rated BVDSs. VGS = 0
VDS = °-8 x Rated BVDSS. VGS = °>
TC = 125°C
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
'GSS
rDS(ON)
VDS(ON)
ld(ON)
V
'd(OFF)
VGS = ±2ov, VDS = ov
ID = 25A, VGS = -10V, (Figures 6, 7)
lD = -25A,Ves = -10V
ID - 12.5A, VDS = -50V, RGS = SOD,
(Figures 10, 11, 12)
Fall Time
tf .
Input Capacitance
CISS
Output Capacitance
coss
Reverse-Transfer Capacitance
CRSS
Thermal Resistance Junction to Case
R8JC
Source to Drain Diode Specifications
VGS = OV, VDS = -25V, f = 1 MHz
(Figure 9)
RFK25P08, RFK25P10
MIN
-80
-100
-2
-
-
-
-
-
-
-
-
-
-
-
-
-
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage (Note 2)
VSD
ISD=-12.5A
-
Diode Reverse Recovery Time
trr
ISD = -4A, dlso/dt = 100A/HS
-
NOTES:
2. Pulse test: pulse width < 300^5, duty cycle < 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
TYP MAX UNITS
-
-
V
-
-
V
-
-4
V
-
-1
HA
-
-25
MA
-
±100
nA
-
0.150
n
-
-3.75
V
35
50
ns
165 250
ns
270 400
ns
165 250
ns
-
3000
PF
-
1500
pF
-
600
PF
-
0.83 °C/W
TYP
-
300
MAX UNITS
-1.4
V
-
ns