MRF501 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – The RF Line

MRF501, MRF502 (continued)
ELECTRICAL CHARACTERISTICS (TA - 25°c uniw ottwrvrae nond)
OFF CHARACTERISTICS
I Symbol
Coltoctor-EmrtUr Breakdown Voltaga
(lc - 3.0 mAdc. IB - 0)
Coll«ctOf-B«w Breakdown Vcritao*
(lc- 1.0 MAdc, IE-0)
Emitw-Ben Breakdown Voltaga
<l£-1.0pAdc,lc-0)
Colltttor Cutoff Currant
(Vca- 1.0 Vdc. IE-0)
ON CHARACTERISTICS
MR F5O1
MRF502
MRFS01
MRF602
BVceo
BVCBO
evEBO
'CBO
DC Currant Gain
MRFS01
"FE
llr; -1.0 mAdc, Vce- 6.0 Vdc)
MRF502
DYNAMIC CHARACTERISTICS
Currant Gain - Bandwdlth Product
MRFS01
|IC - 6.0 mAdc, VCE - 6-0 Vdc, f - 100 MHz) MRF502
Collector-Baai Capacitance
(VCB - 10 vdc, iE - o, f • o.i to 1.0 MHZ)
Colteetor.Baee Time Conitant
HE - 2.0 mAdc, VCB - 6-0 Vdc, f - 31 .8 MHz)
Noia. Figure
(Figure!)
llc • 1.5 mAdc, VCE -6.0 Vdc,
RS - SOohmi, f - 200 MHz)
MRF501
MRF602
FUNCTIONAL TEST
Common-EmitW Amplifier Pow«r Gain (Figure 1) MRFS01
(Vcc - 6-0 Vdc, lc - 6.0 mAdc, f - 200 MHz) MRFB02
ff
^cto
rb'Cc
NF
Gp.
I TV, I _{I Urt. I}
Vdc
IS
25
36
:~
Vdc
Vdc
3.6
-
-
so
nAdc
20
30
-
25O
-
40
170
600
1000
800
1200
~
0.6
'
8.0
-
4.5
4.0
_
MHz
-
pc
-
pi
dB
=
15
-
dB
_
17
FIGURE 1 - MOMHl AMPLIFIER POWER GAIN
AND NOISE FIGURE CIRCUIT
1N319S
LI 13/4Turn, til AWG, 0.5" Long, 0.5" DiirMir
L2 2Tufm,#16AWG,0.5" Long.IU"D*in«ir
L3 2 Turin, fit AWG, 0 25" Long, 0.5" Oiimrtr, Portion ApproikniUly OJS" from L2