MRF486 Datasheet, PDF (2/2 Pages) Motorola, Inc – NPN SILICON RF POWER TRANSISTOR

IMRF486
ELECTRICAL CHARACTERISTICS(TC - 25°C unl.»othm.,,. noted)
Symbol
TYII
Off CHARACTERISTICS
Collector-Emitter Breakdown Voltage
HC - 50 mAdc, IB «0)
Collector-Emitter Breakdown Voltage
Hc-somAoc. VBE *o>
Collector-Ba$e Breakdown voltage
dc" 50 mAdc. IE -01
Emitter-Saw Breakdown Voltage
(IE -5.0 mAdc, Ic -0)
Collector Cutoff Currant
(VCE - 28Vdc. V8f. • 0, TC - 26°C)
VIBRICEO
35
-
VI«R)CES
65
-
VjBRICBO
65
—
V<8R)680
40
~
!CES
-
-
ON CHARACTERISTICS
OC Current Gain
(1C - 2 0 Adc, VCE - 5 0 Vdcl
"FE
10
40
DYNAMIC CHARACTERISTICS
Output CaoKitance
(VCB • 27 Vdc, IE - 0, f - 1 0 MHil
Cob
-
130
FUNCTIONAL TESTS
Common-Emitter Amplifier Power Gain
IVgc • 28 Vdc,Pout-40W (PEPI.fi -30MHz.
f2 - 30 001 MHi, ICQ - 40 mAdcl
Collector Efficiency
(Vcc • 28 Vdc. P0ut • 40 W (PEPI.I1 = 30 MHi,
(2 • 30 001 MHz, ICQ - 10 mAdc)
Intarmodulation Distortion (11
IVCC • 28Vdc. Pout - 40 W IPEPI. fl - 30 MHj.
12 • 30 001 MHz. ICQ = 40 mAdcl
G|.E
IS
""
40
IMD(d3l
175
45
-36
111 To MIL-STD-1311 Vtrnon A. Ten MetnotJ 2204B, Two Tone, Reference Each Tone
FIGURE 2 - OUTPUT POWER »ertut INPUT POWER
-
Vdc
-
Vdc
~
Vdc
~
Vdc
10
mAdc
—
~
200
of
dB
-30
dB
C,n, INPUT POWER (WATTS)
FIGURE 3 - OUTPUT POWER »nuiSUPPLY VOLTAGE
r~ "~
1.1g. 30 ooi yu.
IMO d3) - -] 16
ICQ ^{• MmA}
>XX'
^
^^
LX-"
x^
X
xf.
—^
20
24
28
VCC. SUPf IV VOLTAGE IVOITSI
FIGURE 4 - POWER GAIN «er»js FREQUENCY
•——*-^» **,
"* »» _•»
V CC-2! Vdc
'CO = 40
WPEP
"V.
^\0
f FREQUCNCVIIIHl)
30
SO 10
10
IS 20