MRF323 Datasheet, PDF (2/2 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MRF323
ELECTRICAL CHARACTERISTICS — continued (Tc = 25 C unless otherwise noted )
Characteristic
Symbol
Win
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0MHz)
Cob
—
20
24
PF
FUNCTIONAL TESTS (Figure I }
Common-Emitter Amplifier Power Gain
(Vcc = 28 Vdc, P^ = 20 W, f = 400 MHz)
Collector Efficiency
(Vcc = 28 Vdc, P^t = 20 W, f = 400 MHz)
Load Mismatch
(Vcc = 28 Vdc, P^ = 20 W, f = 400 MHz,
VSWR = 30:1 all phase angles)
GPE
10
11
—
dB
n
50
60
—
%
M'
No Degradation in Output Power
RF INPUT;> Q
RF OUTPUT
C1, C2, C6— 1.0-20 pF Johanson Trimmer (JMC 5501)
C3, C4 — 47 pF ATC Chip Capacitor
C5, C8 — 0 1 jiF Erie Redcap
C7 — 0.5-10 pF Johanson Trimmer (JMC 5201)
C9, CIO — 680 pF Feedthru
C11 — 1.0 uF 50 Volt Tantalum
C12 — 0.018 uF Vitramon Chip Capacitor
LI — 0 33 nH Molded Choke with Ferroxcube Bead
(Ferroxcube 56-590-65/4B) on Ground End
L2 — 6 Turns #20 Enamel, 1/4" ID, Closewound
L3 — 4 Turns #20 Enamel, MB" ID. Closewound
L4 — Ferroxcube VK200-19/4B
R1 — 5.1 Q 1/4 Watt
21 — Microstrip 0 1" W x 1.35" L
22 — Microstrip 01" W x 0.55" L
23 — Microstrip 0.1" W x 0.8" L
Z4 — Microslrip 0.1" W x 1.75" L
Board — Glass Teflon e, = 2.56, t = 0.062"
Input/Output Connectors — Type N
Figure 1. 400 MHz Test Circuit Schematic