MRF141G Datasheet, PDF (2/2 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER MOSFET

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
, LJna.
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FAX: [phone]
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noled)
Characteristic
Symbol
OFF CHARACTERISTICS (1)
Drain-Source Breakdown Voltage
(VGs = 0, b = 100mA)
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
Gate-Body Leakage Current
(VGS = 20 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = 10V, ID = 100mA)
VGS(HI)
Drain-Source On-Voltage
(VGS = 10V, ID = 10A)
VoS(on)
Forward Transconductance
9(5
(VDS = 10V, ID = 5.0A)
DYNAMIC CHARACTERISTICS (1)
Input Capacitance
Ciss
(VDS = 28V, VGS = 0,1 = 1.0 MHz)
Output Capacitance
GOES
(VDS = 28 V, VQS = 0, f = 1 .0MHz)
Reverse Transfer Capacitance
Crss
(VDS = 28 V, VGS = 0, f = 1 .0 MHz)
FUNCTIONAL TESTS (2)
Common Source Amplifier Power Gain
Gps
(VDD = 28 V. Pou, = 300 W, IDQ = 500 mA, f = 175MHz)
Drain Efficiency
TI
(VDD = 28 V, Poul = 300 W, f = 1 75 MHz,ID (Max) = 21.4 A)
Load Mismatch
V
(VDD = 28 V. Pou, = 300 W, IDQ = 500 mA, f = 175 MHz,
VSWR 5:1 at all Phase Angles)
NOTES:
1. Each side measured separately.
2. Measured in push-pull configuration.
Mln
TVP
Max
Unit
65
—
—
Vdc
—
—
5.0
mAdc
—
—
1.0
(jAdc
1.0
3.0
5.0
Vdc
0.1
0.9
1.5
Vdc
5.0
7.0
—
mhos
—
350
—
pF
—
420
—
PF
—
35
—
pF
12
14
—
dB
45
55
—
%
No Degradation in Output Power
Quality Semi-Conductors