MMBT2484 Datasheet, PDF (2/3 Pages) New Jersey Semi-Conductor Products, Inc. – NPN General Purpose Amplifier

NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
BVcso
Collector-Base Breakdown Voltage
BVcEO
BVEBO
Collector-Emitter Breakdown
Voltage*
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
lc = 10 uA, IB = 0
Ic = 10 mA, IE = 0
lc = 10uA, IE =0
VCB = 45 V, IE = 0
VCB=45 V, IE = 0, TA = 150°C
VEB = 5.0V, lc = 0
60
V
60
V
5,0
V
10
nA
10
MA
10
nA
ON CHARACTERISTICS
MFE
DC Current Gain
VcE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
lc = 1.0mA, V C E = 5 . 0 V
lc = 10mA, VcE = 5.0V*
Ic = 1.0mA, IB =0.1 mA
lc = 1.0mA, VCE =5.0V
250
800
0.35
V
0.95
V
SMALL SIGNAL CHARACTERISTICS
Cobo
Output Capacitance
Cibo
Input Capacitance
NF
Noise Figure
Pulse Test: Pulse Width < 300 us, Duty Cycle < 3.0%
VCB =5.0 V, f = 140kHz
VEB = 0.5V, f = 140 kHz
Ic = 10uA, VCE = 5.0V,
Rs = 1 0k,f = 1 .0 kHz.BW =200 Hz
6.0
PF
6.0
PF
3.0
dB