MMBR941L Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN RF Transistor

Silicon NPN RF Transistor
MMBR941L
ELECTRICAL CHARACTERISTICS
Tc=25"C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 0.1mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
lc= 0.1mA; IE= 0
IEBO
Emitter Cutoff Current
VEB= 1V; lc= 0
ICBO
Collector Cutoff Current
VGB=10V;IE=0
10
V
20
V
0.1
uA
0.1
uA
hFE
DC Current Gain
lc= 5mA ; VCE= 6V
50
200
COB
Output Capacitance
lE=0;VCB=10V;f=1MHz
fi
Current-Gain — Bandwidth Product
lc=15mA;VCE=6V;f=1GHz
I S21e I 2 ^{Insertion Power Gain}
lc= 15mA ; VCE= 6V;f= 1 .OGHz
I S21e I 2 Insertion Power Gain
lc= 15mA ; VCE= 6V;f= 2.0GH2
0.35
PF
8
GHz
14
dB
8.0
dB
GU max Maximum Unilateral Gain
lc= 15mA ; VCE= 6V;f= 1 .OGHz
16
dB
GU max Maximum Unilateral Gain
NF
Noise Figure
lc= 15mA ; VCE= 6V;f= 2.0GHZ
lc=5mA;VcE=6V;f=1GHz;
RG= 50 n
10
dB
1.9 2.8 dB