MJW16110 Datasheet, PDF(2/2 Page) New Jersey Semi-Conductor Products, Inc.

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

MJW16110 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – NPN Silicon Power Transistors

◁

MJ16110MJW16110

ELECTRICAL CHARACTERISTICS (Tc = 25Â°C unless otherwise noted)

Characteristic

Symbol

OFF CHARACTERISTICS (1)

Collector-Emitter Sustaining Voltage (Table 1) (Ic = 20 mAdc, IB = 0)

Collector Cutoff Current

(VCE = 650 Vdc, VBE(off) =15 v)

(VCE = 650 Vdc, VBE(off) = 1-5V, TC = 100Â°C)

vCEO(sus)

!CEV

Collector Cutoff Current (VCE = 650 Vdc, RBE = 50 iJ, TC = 100Â°C)

Emitter-Base Leakage (VEB = 6 Vdc, Ic = 0)

ON CHARACTERISTICS (1)

Collector-Emitter Saturation Voltage

(IC = 5Adc, le = 0.5Adc)

(IC = 10 Ado, |B = 1.2Adc)

(IC = 10Adc, !B = 2Adc)

(IC = 10 Adc, IB = 2 Adc, TC = 100Â°C)

!CER

IEBO

VcE(sat)

Base-Emitter Saturation Voltage

(IC = 10 Adc, IB = 2 Adc)

(IC = 10 Adc, IB = 2 Adc, TC = 100Â°C)

vBE(sat)

DC Current Gain (Ic = 15 Adc, VCE= 5vdc)

DYNAMIC CHARACTERISTICS

Dynamic Saturation

Output Capacitance (VCE = 10 Vdc, IE = 0, ftest = 1 kHz)

SWITCHING CHARACTERISTICS

Inductive Load (Table 1)

Storage

Crossover

Fall Time

Storage

Crossover

IC = 10A, IB1=1 A,

\v/Bf*Et-/(ofaf)\ ^ Â°\ v'

VcE(pk) = 250 V

Tj = 25Â°C

Tj = 100Â°C

Fall Time

Resistive Load (Table 2)

Delay Time

Rise Time

Storage Time

Fall Time

VCC = 250 V,

PW = 30 us,

IB2 = 2A,

RB2 = 4U

Storage Time

Fall Time

VvBnEc(/OÂ«fmf)

<5 V

(1) Pulse Test: Pulse Width = 300 [is, Duty Cycle < 2%.

hFE

VcE(dsat)

Cob

tsv

tfi

tsv

tfi

Min

Typ

Max

400

100

1000

0.3

0.9

0.7

2.0

0.3

1.0

0.4

1.5

1.2

1.5

1.2

1.5

See Figures 11, 12, and 13

400

700

1500

150

1000

2000

200

125

330

800

110

500

250

Unit

Vdc

nAdc

jiAdc

I^Adc

Vdc