MJH16002 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(5A,450V,100W)

ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless othervvise noted )
Characteristic
Symbol
MJH16002, MJH16004 NPN
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(lc=100mA.IB=0)
Collector Cutoff Current
( VCEV* Rated Value, VBE(om=1.5 V )
( VCEV= Rated Value, V.^-1.5 V , Tc=100 °C)
Emitter Cutoff Current
(VEB=6.0V, lc-0)
ON CHARACTERISTICS (1)
DC Current Gain
(U*5.0A,VCE=5.0V)
Collects-Emitter Saturation Voltage
(lc=1.5A,lB=200mA)
(lc=1.5A,lB=150mA)
(lc=3.0A,L*400mA)
(lc=3.0A,lB=300mA)
Base-Emitter Saturation Voltage
(lc=3.0A,lB=400mA)
(lc=3.0A.IB=300mA)
MJH16002
MJH16004
MJH16002
WIJH16004
MJH16002
MJH16004
MJH16002
MJH16004
VCEO(«n)
V
450
'CEV
mA
0.25
1.5
IEBO
mA
1.0
hFE
5.0
7.0
Vcs™
V
1.0
1.0
2.5
2.5
VBE<«t)
V
1.5
1.5
DYNAMIC CHARACTERISTICS
Output Capacitance
Cob
( VCB ~ 10 V , IE = 0, f = 1.0 kHz )
SWITCHING CHARACTERISTICS
Delay Time
VCC = 250V, IC = 3.0A
*d
Rise Time
2IB1=-IB2=0.8A
tr
Storage Time
tp = 30 us.Duty Cycle S2.0%
t.
Fall Time
tf
(1) Pulse Test Pulse Width =300 us,Duty Cycle S 2.0%
PF
200
0.1
us
0.4
us
3.0
us
0.4
us