MJE13008 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(12A,300-400V,100W)

ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted )
Characteristic
Symbol
MJE13008, MJE13009 NPN
Mln
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(lc=10mA,l_=0)
MJE13008
MJE13009
Collector Cutoff Current
( VCEV= Rated Value, VBE(ofl,=1 .5 V )
( V^ Rated Value, VBE(off)=1 .5 V , Tc=100 °C)
Emitter Cutoff Current
(VEB=9.0V, lc=0)
VCEO(IUS)
V
300
•400
'CIV
mA
1.0
5.0
'EBO
mA
1.0
ON CHARACTERISTICS (1)
DC Current Gain
(lc=5.0A,Vce-5.0V)
(IC=8.0A,VCE=5.0V)
Collector-Emitter Saturation Voltage
(IC=5.0A,IB=1.0A)
(IC=8.0AJB=1.6A)
(IC=12A,IB=3.0A)
Base-Emitter Saturation Voltage
(IC=5.0A,IB=1.0A)
(IC=8.0A,IB=1.6A)
hFE
8.0
40
6.0
30
VCC(«t)
V
1.0
1.5
3.0
vM
V
1.2
1.6
DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product
( lc = 500 mA , VCE = 10 V ,f = 1.0 MHz )
Output Capacitance
( ^ = 10 V , IE = 0, f = 0.1 MHz )
'T
4.0
Cob
180(typ)
MHz
PF
SWITCHING CHARACTERISTICS
Delay Time
V^-s 125V, IC = 8.0A
<d
Rise Time
IB1=-IB2=1.6A
tr
Storage Time
tp = 25 us.Duty Cycle £1.0%
*,
Fall Time
«f
(1) Pulse Test Pulse Width =300 us.Duty Cycle £ 2.0%
0.1
US
1.0
us
3.0
us
0.7
us