MJ900 Datasheet, PDF (2/4 Pages) Comset Semiconductor – COMPLEMENTARY POWER DARLINGTONS

MJ900 - MJ901 PNP
MJ1000 - MJ1001 NPN
Symbol
Ratings
MJ900
IB
Ba- Current
..JJWW
i @ Tc < 25°
MJ1001
MJ900
PT
Power Dissipation
K
'••_D- _erat_te
- I j^l^
above MJ901
25°C
MJ1001
MJ900
Tj
Junction Temperature
MJ901
MJ1001
MJ900
Ts
Storage Temperature
MJ901°
MJ1001
THERMAL CHARACTERISTICS
Value
Unit
0.1
90
0.515
Adc
Watts
W/°C
-65 to +200
°C
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
MJ900
Mj.y•ui.
MJ1001
Value
1.94
Unit
°c/w
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
VCEO
Collector-Emitter
Breakdown Voltage (*)
I_IC,._E«_O
Collector Cutoff Current
Test Condition(s)
lc=100 mAdc, IB=0
MJ900
MJ1000
MJ901
MJ1001
Min Typ MX
60 - -
80
Unit
Vdc
Vce=30Vdc,,B=0
VcE=40Vdc,,e=0
jJIJI", -
IJJJIJ, -
-
Kflf)
-