MCR65-1 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon Controlled Rectifier

MCR63-1 thru MCR63-10 • MCR64-1 thru MCR64-10 • MCR65-1 thru MCR65-10
THERMAL CHARACTERISTICS
Charactariatle
Thermal Resistance, Junction to Case
Pressfit and otud
Isolated Stud
Symbol
MM
Unit
"we
•CM
1
1.1
(1) VRRM for all type* can ba applied on a continuoui dc baaia without incurring damege Ratings apply for
tero or negative gate voltage. Device* ahall not have a positive biaa applied to the gate concurrently
with a negative potential on tha anode.
ELECTRICAL CHARACTERISTICS (TC = 25'C unless otherwise noted.)
Characteristic
Peak Forward or Reverse Blocking Current
(Rtted VDRM or VRRM. 9«« °P«n) Tj = 25*C
Tj = 125-0
Forward "On" Voltage
OTM - 1?5 A Peak)
Gate Trigger Current (Continuous dc)
<vD - 12 v, RL - 50 m
TC = 25'C
TC- -40°C
Gate Trigger Voltage (Continuous dc)
<vD = 12 v, RL = so m
(VD = Rated VDRM. RL = 1 kn, Tj = 126-0
TC = 25°c
TC = -40-C
Holding Current
(VD = 12 V, RL = 50 n. Gate Open)
Forward Voltage Application Rate
(Tj - 125'C, VD = Rated VDRM)
Symbol
<DRM' IRRM
VTM
IGT
VGT
IH
dv/dt
Mln Max Unit
—
10
HA
2
mA
—
2
Volts
mA
—
40
75
Volts
3
3.5
0.2
^
60
mA
50
—
V/MS