KSD5060 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcE(sat) ^{Collector-Emitter Saturation Voltage lc= 2A; IB= 0.6A}
VeE(sat) ^{Base-Emitter Saturation Voltage}
lc= 2A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; lc= 0
hFE
DC Current Gain
lc= 0.5A ; VCE= 5V
fr
Current-Gain—Bandwidth Product
lc=0.5A;VCE=10V
VECF
C-E Diode Forward Voltage
tf
Fall Time
IF= 2.5A
lc=2A, IB1=0.6A;IB2=-1.2A
RL=100Q;VCC=200V
KSD5060
MIN TYP. MAX UNIT
8.0
V
1.5
V
10 u A
40
200 mA
8
3
MHz
2.0
V
0.4 u s