J111 Datasheet, PDF (2/2 Pages) NXP Semiconductors – N-channel silicon field-effect transistors

N-channel silicon field-effect transistors
J111; J112; J113
RATINGS
Limiting values in accordance with the Absolute Maximum System (EC 134)
Drain-source voltage
Gate-source voltage
Gate-drain voltage
Gate forward current (DC)
Total power dissipation
±VDS
~VGSO
-VGDO
IG
max.
max.
max.
max.
up to Tamb = 50 °C
Storage temperature range
Junction temperature
Pfot
max.
Tstg
Tj
max.
THERMAL RESISTANCE
From junction to ambient in free air
Mh j-a
STATIC CHARACTERISTICS
TJ = 25 °C unless otherwise specified
Gate reverse current
-VGS=15V;VDS = 0
Drain cut-off current
VDS = 5V;-VGS = 10V
Drain saturation current
VDS=15V;VGS = 0
Gate-source breakdown voltage
-IG = 1 nA; VDS = 0
Gate-source cut-off voltage
VDS = 5 V; ID = 1 nA
Drain-source on-state resistance
VDS = 0.1 V;VGS = 0
-loss
rnax.
-IDSX
max.
IDSS
mm-
~V(BR)GSS
~VGs off
min-
min.
max.
Roson
max.
J111
1
1
20
40
3
10
30
40 V
40 V
40 V
50 mA
400 mW
-65 to +150 °C
150 °C
250 K/W
J112
J113
1
1 nA
1
1 nA
5
2 mA
40
40 V
1
0.5 V
5
3V
50
100 Q