IRFP440 Datasheet, PDF (2/2 Pages) Intersil Corporation – 8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET

IRFP440
Electrical Characteristics @ Tj = 25°C (unless otherwise specified)
Parameter
V(BH)DSS
Drain-to-Source Breakdown Voltage
AV(BH)DSS/ATj Breakdown Voltage Temp. Coefficient
RnSfonl
Static Drain-to-Source On-Resistance
Vosah;
Gate Threshold Voltage
gis
Forward Transconductance
.
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qga
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(oll)
Turn-Off Delay Time
ti
Fall Time
LD
Internal Drain Inductance
Ls
Internal Source Inductance
Ciss
Input Capacitance
CQSS
Output Capacitance
C,ss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Test Conditions
500
0.78
V VGs=OV, ID= 250uA
v/°c Reference to 25"C, b= 1 mA
0.85 Q Vcs=10V, ID=5.3A -'
2.0
4.0 V VDS=VGS. b= 250jiA
5.3
—
S VDs=50V, lo=5.3A <?•
— — 25
VDs=500V, VGS=OV
flA
250
VDs=400V, Vos=OV, Tj=125"C
—
100
VGS=20V
— -100
VGs=-20V
— — 63
b=8.0A
11 nC Vos=400V
30
VGs=10V See Fig. 6 and 1 3 <
14
VDD=250V
— 23
b=8.0A
49
RG=9.1£!
— 20
Rn=31U See Figure 10 ?
Between lead.
— 5.0 —
6 mm (0.25in.)
nH
°
(^~Â¥\d center of
— 13 -
die contact
s
1300
VGS=OV
31C — PF VDS= 25V
— 120 —
f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter
Is
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) O
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Q,r
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Test Conditions
MOSFET symbol
D
—
8.8
showing the
/] I—;
A _{integral reverse G-\ H 5}
35
p-n junction diode.
S
— 2.0 V Tj=25cC, IS=8.8A, VGs=OV ®
— 460 ; 970 ns Tj=25°C. IF=8.0A
— 3.5 | 7.6 uC di/dt= 100A/us ®
Intrinsic turn-on time is negiegible (turn-on is dominated by LS+LD)
vL_,i