IRF440R Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Avalanche Energy Rated N-Channel Power MOSFETs

IRFP440R, IRFP441R, IRFP442R, IRFP443R
Electrical Characteristics @ Tc = 25° C (Unless Otherwise Specified)
PWMUT
BVn. Drain • Source Breakdown Voltage
VOMM
Ion
Ion
loo
Gate Threshold Voltage
Qate-Source Leakage Forward
Oato-Source Leakage Reverse
Z»ro Qata Voltage Drain Current
ln» On-State Drain Current ®
Type
Mb. TVD. Max.
IRFP440R
IRFP442R
500
-
-
IRFP441R
IRFP443R
480
ALL
2.0
ALL
—
ALL
—
—
ALL
—
IRFP440R
IRFP441R
8.0
--
—
4.0
—
100
-100
_
250
—
1000
--
RCK» Static Drain-Source On-State
Resistance®
n>
Forward Trantconduclance ®
C. Input Capacttance
Co. Output Capacitance
Cm Revert; Transfer Capacitance
torn Turn-On Delay Time
l
Rlae Time
U»i Turn-Off Delay Time
ti
Fall Time
Q,
Total Gate Charfle
(Qate-Source Plus Qate-Oraln)
Of
Gate-Source Charge
Qan Gate-Drain ("Miller") Charge
Lo
Internal Drain Inductance
IRFP442R
IRFP443R
7.0
-
-
IRFP440R
IRFP441R
-
U 0.86
IFIFP442R
IRFP443R
-
1.0
1.1
ALL
ALL
4.0
6.5
_
1225
—
_
ALL
—_
200
—
ALL
85
—
ALL
—
17
35
ALL
—
5
15 _
ALL
—
42
90
ALL
—
14
30
ALL
-
42
80
ALL
ALL
—
_
20
22
—
—
ALL
5.0
Unto
V
V
V
nA
nA
«A
M
A
A
a
a
S(0)
PF
f>F
pF
ni
n»
na
ns
nC
nC
nC
nH
U
Internal Source Inductance
ALL
12.5
nH
VM-OV
Test CondNtons
b = 2500A
Vn. = VM.lD = 25QuA
V« = 20V
Vo. = -20V
Vn = Max. Rating. VM = 0V
Vn - Max. Rating x 0.8, Vo, = 0V, To = 125°C
VD. > low! x ROM n^. V« - 10V
V«=10V, ID»4.0A
Vtx > IDIM x RMIMCT,. le = 4.0A
See Fig. 10
.0MHz
Voe - 200V, lo = 4.0A. Ze = 4.70
See Fig. 17
(MOSFET twitching tlmea are etaentlally
Independent of operating temperature.)
Vai=10V, lo = 10A,V[» == 0.8 Max Rating.
See Fig. 18tor teat circuit (Gate charge la
etaentlally Independent o operating
temperature.)
Measured between
the contact screw on
header that is closer to
source and gate pins
and center of dte.
Measured from the
source pin, 6 mm
(0.25 in.) from
header and source
bonding pad.
Modified MOSFET
symbol showing the
internal device -
Inductances o
Thermal Resistance
R*JC
R»CS
FUJA
JunctiorHojCase
Case-to-Sink
Junction-to-Ambient
ALL
_
....
1.0 "CM
ALL
_
0.1
_ _°c/w Mounting surface flat, smooth, and greased.
ALL
-
—
30 °c/w Free Air Operation
Source-Drain Diode Rating* and Characteristics
Is
Continuous Source Current
(Body Diode)
Isu
Pulse Source Current
(Body Diode) ®
Vso Diode Forward Voltage ©
t.
Reverse Recovery Time
Qm Reverse Recovered Charge
t«<
Forward Tum-on Time
IRFP440R
IRFP441R ^-
-
8.0
A
Modified MOSFET symbol
showing the integral
IHFP442R
IRFP443R ^-
-
7.0
reverse P-N junction rectifier.
A
o
IHFP440R
IRFP441R
-
-
32
A
IRFP442R
IRFP443R ^-
-
28
A
IRFP440R
IFIFP441H ^-
-
2.0
V Tc = 25°C. Is = 8.0A VQB = 0V
IRFP442R
IFIFP443R ^-
-
ALL
^.
1100
1.9
_
V Tc =2S°C, Is = 7.0A, VQS =0V
ns Tj = 150"C. U = 8.0A, dWdt = 100A/^s
ALL
—
6.4
—
tiC Tj = 150°C, b = 8.0A, dWdt = 100A/^s
ALL
Intrinsic turn-on time la negligible.
Tum-on speed Is substantially controlled by U + Lo.
Q Tj = 25°C to 150°C. ®Pube Test: Pulse width <300ps. Duty Cycles 2*.
® Repetitive Rating: Pulse width limited by max junction temperature. See Transient Thermal Impedance Curve (Fig. 5).
® Voo = 50V. starting Tj = 25°C. L = 11rnH. R.. == SCO. l_ = 8.8A. See figures 15.16.