D44Q Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – High Switching Speed

isc Silicon NPN PowerTransistors
D44Q1/3/5
ELECTRICAL CHARACTERISTICS
T-=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Collector-Emitter
VcEO(SUS) _{Sustaining Voltage}
D44QI
D44Q3
D44Q5
lc= 10mA :IB= 0
VcE(sat) ^{Collector-Emitter Saturation Voltage IC=2A:IB=0.2A}
VsE(saD ^{Base-Emitter Saturation Voltage}
Collector
ICBO
Cutoff Current
D44QI
D44O3
D44Q5
IC=2A:IB=0.2A
VCB= 200V:IE= 0
VCB=250V:IE=0
VCB= 300V:IE= 0
hpE-1
DC Current Gain
lc=0.2A;VcE= 10V
llFE-2
DC Current Gain
lc=2A :VCE= 10V
fr
Current-Gain—Bandwidth Product lc=0.1A:VCE= 10V
COB
Output Capacitance
lE=0:VcB= 10V: f= 1MHz
Switching Times
ton
Delay Time
tstg
Storage Time
tf
Fall Time
VCC= 50V
lc=1A:lBi=-lB2=0.1A
MIN TYP. MAX UNIT
125
175
V
225
1.0
V
1.3
V
10
10
uA
10
30
20
20
MHz
32
PF
0.4
uS
5
2.0
ys
1.7
,- s