D41E Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – PNP POWER TRANSISTORS

electrical Characteristics (TC = 25° C) (unless otherwise specified)
I
CHARACTERISTIC
| SYMBOL " MIN
off characteristics*1'
Collector-Emitter Sustaining Voltage
(lc = 10mA)
Collector Cutoff Current
(VCE = Rated VCES)
Emitter Cutoff Current
(VEB = 5V)
D41E1 _VCEO(SUS)
-30
D41E5
-60
D41E7
-80
ICES
—
IEBO
—
second breakdown
| Second Breakdown with Base Forward Biased
FBSOA
on characteristics
DC Current Gain
(lc = -100mA, VCE= -2V)
(IC = -1A,VCE = -2V)
hFE
50
hFE
10
Collector-Emitter Saturation Voltage
(IC = -1.0A, IB = -0.1 A)
Base-Emitter Saturation Voltage
(lc= 1.0mA, IB =0.1A)
VcE(sat)
—
VBE(sat)
—
dynamic characteristics
Collector Capacitance
(VCB --10V, f = 1M|HZ)
Current-Gain Bandwidth Product
(IC = -100mA, VCE = -10V)
CCBO
—
fr
—
switching characteristics
Resistive Load
Delay Time +
Rise Time
\ - -1A, IBI = IBZ = -0.1 A
Storage Time
Fall Time
VCC = 30V, tp = 25 Msec
(1) Pulse Test PW = 300ms Duty Cycle £ 2%.
td + V
—
ts
—
tf
TYP
MAX
—
—
—
-0.1
—
-0.1
SEE FIGURE 1
—
—
—
1.0
—
-1.3
13
—
175
—
180
—
250
—
110
—
" ^PE/.ktf
CURRENT
MAX. POWER DIS sinVT ON
CASE * ^{70 •c}
PULS ED OPE RAT 100
DUTY CYCLE < !0*
N ^CURRE
§Js
PULSE
IA
s_> V ^V _^
Orn. PULSE
v<"
^^s _•s^ ^{I0m« PULSE}
.
D. c.-
N
O.IA
X _^,\
MAX _E , D4IEI
XV
^V
\^L_
*
1 _\^
MAX VCE<) 04IE5—{—
iv
MAX
I
. _{£< , D4IE-}
1
1
iov
^_IDOV
FIG. 1 SAFE REGION OF OPERATION
500
Tj- I50«C
Tj-25'C
Tj—5S'C
100
VCE-ZV
30
\
^^
0.01
o.io
1.0
Ic-AMPERES
FIG. 2 TYPICAL HFE VS lc
UNIT
Volts
0A
/*A
—
Volts
Volts
PF
MHz
nS