D41D Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – PNP POWER TRANSISTORS

electrical Characteristics (Tc = 25° C) (unless otherwise specified)
CHARACTERISTIC
SYMBOL
MIN
off characteristics'1'
Collector-Emitter Sustaining Voltage
(lc = 10mA)
Collector Cutoff Current
( VCE = Rated VCEO)
(VCE = Rated VCES)
Emitter Cutoff Current
(VEB = sv)
Tc = 25° C
TC = 1 50° c
D41D1.2 _VCEO(SUS)
-30
D41D4, 5
-45
D41D7, 8
-60
ICES
—
'EBO
—
second breakdown
Second Breakdown with Base Forward Biased
FBSOA
on characteristics
DC Current Gain
(lc = 1 00mA, VCE = 2V)
(IC = 1A, VCE = 2V)
Collector-Emitter Saturation Voltage
(1C = -500mA, IB = -50mA)
Base-Emitter Saturation Voltage
(lc = -500mA, IB = -50mA)
D41 D1 . 4, 7
hFE
50
D41 D2, 5, 8
120
D41 D1.4.7
hFE
10
D41D2
20
D41D5, 8
10
D41 D1 , 2, 4, 5 _VcE(sat)
—
D41D7, 8
vBE(sat)
—
dynamic characteristics
Collector Capacitance
(VCB = 10V, f = 1Mnz)
Current-Gain — Bandwidth Product
(lc = -20mA, VCE = -10V)
CCBO
—
fr
—
switching characteristics
Resistive Load
Delay Time +
Rise Time
1C = -1A. IB1
= -0.1A
Storage Time
Fall Time
Vcc = -30V, ^{tip_ - 2^}
(1) Pulse Test PW = 300ms Duty Cycle < 2%.
td + V
—
ts
—
tf
—
TYP
MAX
UNIT
Volts
—
—
-0.1
-1
M
—
-0.1
M
SEE FIGURE 7
150
—
360
—
—
—
0.5
Volts
1.0
—
1.5
Volts
10
—
PF
150
—
MHz
50
—
nS
75
—
40
—
m •M^OI ^.
M
r„
_—
•
•-
•-
H
N
H
T j - 1«' C
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j - I»'C
j.-t»-e
=5 _—-^•^\^ _\
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ic-auicnn.cuM.T-..
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— I '— ^{— -}
too _{•1 '"~™}
-'
FIG. 1
TYPICAL hpE VS.
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--f
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s
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FIG. 2