D40E Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – NPN POWER TRANSISTORS

electrical Characteristics (Tc = 25° C) (unless otherwise specified)
L
CHARACTERISTIC
SYMBOL
MIN
off characteristics*1*
Collector-Emitter Sustaining Voltage
(lc = 10mA)
Collector Cutoff Current
(VCE = Rated VCES>
Emitter Cutoff Current
(VEB = 5V)
D40E1 _vCEO(sus)
30
D40E5
60
D40E7
80
ICES
—
IEBO
—
second breakdown
Second Breakdown with Base Forward Biased
FBSOA
on characteristics
DC Current Gain
(lc = 100mA, VCE = 2V)
OC = 1A, VCE = 2V)
Collector-Emitter Saturation Voltage
(IC = 1-OA, IB = 0.1A)
Base-Emitter Saturation Voltage
(lc = 1.0mA, IB = 0.1 A)
hFE
50
hFE
10
VcE(sat)
—
vBE(sat)
—
dynamic characteristics
Collector Capacitance
(VCB = 10V, f = 1MHz)
Current-Gain — Bandwidth Product
(lc = 100mA, VCE = 10V)
CCBO
—
*T
—
switching characteristics
Resistive Load
Delay Time +
Rise Time
lc = 1A, IB1 = lB2 = 0.1A
Storage Time
Fall Time
Vcc = 30V, tp = 25Msec
(1) Pulse Test PW = 300ms Duty Cycle < 2%.
td + V
—
ts
—
tf
TYP
MAX
UNIT
Volts
—
—
—
0.1
//A
—
0.1
A,A
SEE FIGURE 1
—
—
—
—
1.0
Volts
—
1.3
Volts
9
—
PF
230
—
MHz
130
—
nS
400
—
170
1
PEAK •
CURRENT
ro ^{MAX. POWER DIS SIP/}
CASE 2 ^•c
N
^xTc^
.
PULSED OPI
DUTY CYCLE
RAT w
< •on
500
CURRE
NT"^
PULSE
IA
\> ^{V •^} V
. _{Omt PULSE -}
^^{s SK} _lOmi
v ^{^}
PULSED
D 'i.- ^—'
\N^
^
— —-^'
r- T j- ISC •r.
^«
1
T j-25 •c
^^>
TJ—S 5'C
X
^V
100
vc ^{E - 2 V}
V. V\
^(
O.IA
V\ \ _{D14OES — | —}
•\
MAX _{v< E} | D40E
\N
M ^{\ ^}
30 -
^^V
k_\'_v
MAX _EC
MAX _El , D4OE
*
^
IV
10V
100V
0.01
O.IO
IC-AMPERES
S
I.O
VCE
FIG. 1 SAFE REGION OF OPERATION
FIG. 2 TYPICAL HFE VS lc