D40D Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – NPN POWER TRANSISTORS

electrical Characteristics (Tc = 25° C) (unless otherwise specified)
CHARACTERISTIC
SYMBOL
WIN
off characteristics*1*
Collector-Emitter Sustaining Voltage
(lc = 10mA)
Collector Cutoff Current
(VCE = Rated VCEO)
(VCE =• Rated VCES)
Emitter Cutoff Current
(VEB = 5V)
TC = 25° C
Tc = 1 50° C
D40D1.2 _VCEO(sus)
30
D40D4, 5
45
D40D7, 8
60
'CES
—
'EBO
—
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
on characteristics
DC Current Gain
(lc = 100mA, VCE = 2V)
(IC = 1A,VCE = 2V)
Collector-Emitter Saturation Voltage
(lc = 500mA. IB = 50mA)
Base-Emitter Saturation Voltage
(lc = 500mA, IB = 50mA)
D40D1.4, 7
D40D2, 5, 8
D40D1.4, 7
D40D2
D40D5, 8
D40D1, 2, 4, 5
D40D7, 8
hFE
"FE
vCE(sat)
vBE(sat)
50
120
10
20
10
—•
—
dynamic characteristics
Collector Capacitance
(VCB = 10V, f = 1M|Hz)
Current-Gain — Bandwidth Product
(lc = 20mA, VCE= 10V)
~
—
CBO
f
'T
—
switching characteristics
Resistive Load
Delay Time +
Rise Time
( = 1A , - , = 0 1A
Storage Time
_ 3QV ( m ^
Fall Time
______^
(1)Pijlse Test PW = 300ms Duty Cycle < 2%.
. +{
—
ts
—
lf
—
TYP
MAX
—
—
0.1
1.0
—
0.1
SEE FIGURE 4
150
360
—
E
\
0.5
1.0
—
1.5
8
—
200
—
25
—
200
—
50
—
UNIT
Volts
pA
//A
—
~
Volts
Volts
PF
MHz
nS
»DO
KK3
10
fu
«
10
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1
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, ^{~——•}
^—
S _{j -*} — —: ^^
x>
Viwc
N\
B«OOLM.
"~~--
\ *^
s>
sS
5 "^
\_{' N}
\
\c- COLLICTM CtMWN^a*
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-A„> _ .
[e-eoiAieron cuM«mT-»*
FIG. 1
FIG. 2