BUY52A Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage IC=0.1A;IB=0
V(BR)EBO ^{Emitter-Base Breakdown Voltage}
!E=1mA; lc=0
VoE(sat)-1 ^{Collector-Emitter Saturation Voltage lc= 20A; IB= 2A}
VcE(sat)-2 ^{Collector-Emitter Saturation Voltage lc= 30A; IB= 3A}
VsE(sat) ^{Base-Emitter Saturation Voltage}
lc= 30A; IB= 3A
IGBO ^{Collector Cutoff Current}
VCB= 60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hFE
DC Current Gain
lo=15A;VcE=4V
fr
Current-Gain—Bandwidth Product lc=1A; VCE=15V
BUY52A
MIN TYP. MAX UNIT
60
V
7
V
1.0
V
1.5
V
2.0
V
0.1 mA
0.1 mA
20
150
10
MHz