BUK553 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – PowerMOS transistor Logic level FET

'liEU tSs-ml-donauchoi \Pioaudti., Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
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FAX: [phone]
PowerMOS transistor
Logic level FET
BUK553-60A/B
STATIC CHARACTERISTICS
Tmb = 25 °C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
•es(TO)
IDSS
'DSS
IGSS
f"DS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
VGS = 0 V; ID = 0.25mA
MIN.
60
VDS = VGS; ID = 1 mA
1.0
VDS = 60 V; VGS = 0 V; T = 25 °C
-
VDS = 60 V; VGS = 0 V; T =125 °C
-
VGS = ±15V;VDS = OV
-
VGS = 5 V;
BUK553-60A -
ID = 10A
BUK553-60B -
TYP.
-
1.5
1
0.1
10
0.075
0.08
MAX.
.
2.0
10
1.0
100
0.085
0.10
UNIT
V
V
HA
mA
nA
ii
ii
DYNAMIC CHARACTERISTICS
Tmb = 25 °C unless otherwise specified
SYMBOL PARAMETER
9fs
Forward transconductance
Cjss
Input capacitance
cC-oss
rss
Output capacitance
Feedback capacitance
'don
Turn-on delay time
t,
Turn-on rise time
tdoff
Turn-off delay time
t,
Turn-off fall time
Ld
Internal drain inductance
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VDS = 25V;ID = 10A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 3 A;
VGS = 5 V; RGS = 50 ft;
Rgen = 50 Q
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN. TYP. MAX. UNIT
7
10
-
S
700 825 PF
- 240 350 _PF
130 160 PF
20 30 ns
95 120 ns
-
80 110 ns
65 85 ns
3.5
nH
-
4.5
nH
7.5
-
nH
Quality Semi-Conductors