BFX38 Datasheet, PDF (2/3 Pages) Seme LAB – PNP SILICON EPITAXIAL TRANSISTOR

ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated)
Parameter
ICBO
Collector Cutoff Current
Test Conditions
BFX38 VCB = - 40V IE = 0
BFX39 Tamb=125°C
BFX40 VCB = - 50V ]E = °
BFX41 Tamb=125°C
Min.
Typ.
-0.2
-0.25
-0.2
-0.25
Max. Unit
- 5 0 nA
-50 uA
-50 nA
-50 uA
BFX38 |c = -10uA IE = 0
-55
BFX39
V(BR)CBO Collector-Base Breakdown Voltage
BFX4° IC = -10MA IE = 0
-75
BFX41
Collector Emitter Sustaining
VCEO(SUS)* Vo|tage
BFX38 _{l.c = -1..0m}A_A .I _{B ^}n_O
-55
BFX39
BFX40 ,_{lc = -1}.__0mA. ,_ln-n₀
-75
BFX41
Emitter - Base
(BR)EBO Breakdown voltage
ALL
!E = -10uA lc = 0
-5
Collector- Emitter Saturation
VCE(SAT)" Vo|tgge
Base - Emitter Saturation
VBECSAD- Voltgge
hFE«
DC Current Gain
lc = -150mA IB = -15mA
lc = - 500mA IB = - 50mA
lc = -150mA IB = -15mA
lc = - 500mA IB = - 50mA
BFX38 BFX40
lc--100uA VCE = -5V 60
lc = - 100mA VCE = - 5 V 85
lc = - 500mA VCE = - 5 V 60
BFX39 BFX41
lc = -100uA VCE = -5V 30
lc = . 100mA VCE = - 5 V 40
lc = - 500mA VCE = - 5 V 25
IC = -1A
VCE = -5V
BFX38
30
BFX39
15
BFX40
25
BFX41
10
lc = . 100mA V C E ^ - 5 V
Tamb = -55°C
BFX38 BFX40
30
BFX39 BFX41
15
-0.12
-0.3
-0.8
-0.9
90
130
120
45
70
65
V
V
V
-0.15
V
-0.5
-0.9
V
-1.1
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