BDX69 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

BDX69
BDX69A
BDX69B
BDX69C
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise stated)
Parameter
Test Conditions
Min.
ICBO
Collector Cut-off Current
IE = °
IE = 0
'CEO
'EBO
Collector Cut-off Current
Emitter Cut-off Current
hpE*
D.C. Current Gain
VBE*
vCEsat*
Base - Emitter Voltage
Collector - Emitter
Saturation Voltage
IB = 0
lc = 0
lc = 5A
lc = 20A
lc = 30A
lc = 20A
lc = 20A
VCB = vCBOmax
VCB = y*VcBQrnax
Tj = 200°C
VCE = V4VCEOmax
VEB = 5V
VCE = 3V
VCE = 3V
VCE = 3V
VCE = 3V
IB = 80mA
1000
Cc
fyife
|hfe|
VF
ton
toff
Collector Capacitance
Cut-off Frequency
Small Signal Current Gain
Diode, Forward Voltage
Turn-on Time
Turn-off Time
lE = 'e = 0
f=1MHz
IC=10A
IC = 10A
f=1MHz
VCB = 10V
VCE =3V
VCE = 3V
Ip = 20A
'Con = 20A
'Bon = -'Boff = 80mA
Pulse Test: tp < 300ns, 5 < 2%
Typ. Max.
2
10
Units
mA
6
mA
10
mA
3000
—
4000
2.5
V
2
V
600
pF
50
kHz
20
—
2.5
V
1
us
3.5