BDX18 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – PNP SILICON TRANSISTOR EPITAXIAL BASE

<^£,mL-L,onauctoi
20 STERNAVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BOX 18, BOX 18 N
TELEPHONE: [phone]
[phone]
FAX: [phone]
STATIC CHARACTERISTICS
CARACTERISTIQUES STATIQUES
'e«« = 2B°C
Test conditions
Cont/mom d» mnun
(Unlesi otherwise stated!
tSfuf indications contrtim)
Min. Typ. Max.
VCE =-90V
VBE = -H.5V
BOX 18
-S
mA
Collector-emitter cut-off current
Courint ffiidufl colttctiur-jmtrttur
Vc£ = -60 V
VBE = +1.5V
'cas.-150"0
VCE = -™v
VBE=+1,5V
BOX 18
BOX 18 N
-10
mA
-5
mA
Emitter-base cut-off current
Courtnt rtsidufl emttteur-bist
VC£ = -60V
VBE = 41,5V
tc«,= 150°C
VEB=-7V
'c -o
BOX 18N
'EBO
-10
mA
-5
mA
lc = 200 mA
BOX 18 -60
V
Collector-emitter breakdown voltage
Tension dt cliques* coltfcttur-tmtlttut
'B =°
vceoisus)
lc = 200 mA
BOX 18 N -60
V
'B =«
Ij, = -200 mA
BOX 18 -70
V
Collector -emitter breakdown voltage
Tension at cfoquaga CQttrctvvr-tmttttur
RBE = 10on
VCER(SUI)*
lc = -200 mA
RBE = 100n
BOX 18 N -65
V
lc = -100mA
BOX 18 -90
V
VBE = +1.5V
Collector-emitter breakdown voltage
vrcv, ,*
Tension df c/*4i"#* colltcteurjmelttuf
lc = -100mA
V B E - + 1.6V
BOX 18 N -70
V
Static forward current transfer ratio
Vtteuf satittut ttu rtpport dt trantftrt
direct du counnt
Collector-emitter saturation voltage
Tension df svturftion cotltcttur-emeltfur
VCE = -4V
lc =-4 A
lc = - 4 A
IB =-0,4A
"21 E*
VCESat*
20
70
-1,1
V
Base-emitter voltage
Ttntiion bbfnt--tftnm-rfttttttuvrr
V_"CC_EE =_~~ -4V
|l_uc. ==-4-4A A
* Pulsed
fmpultton*
t «300^s
p
6 <2 %
Test conditions
Condition* dt mttun
VBE*
-11,,88
V
Min. Typ. Max.
Transition frequency
Frequent* dt trtnsition
cCE - -' A
'T
f = 1 MHz
4
MHz
Quality Semi-Conductors