3N209 Datasheet, PDF (2/2 Pages) Digitron Semiconductors – N-CHANNEL DUAL GATE MOS FIELD EFFECT TRANSISTORS

3N209
ELECTRICAL CHARACTERISTICS (continued) (TA •-- 26'C unless otherwise noted.)
Characteristic
FUNCTIONAL CHARACTERISTICS
Symbol
Mln
TYP
Max
Unit
Noise Figure
(VDS - 16 Vdc, VQ2S = 4-° Vde, ID - 10 mAdc, f = 500 MHz)
Common Source Power Gain (Figure 12)
(VDS = 16 Vdc, VQ2S = 4-°vd<;. ID = 10mAdc. f = 600 MHz)
•Bandwidth
(VDS - 16 Vdc, VQ2S = *•<> Vdc, In = 10 mAdc. f = 600 MHz)
NF
—
4.0
6.0
dB
Gps
10
13
20
dB
BW
7.0
—
17
MHz
FIGURE 1 - MOSFET CIRCUIT SCHEMATIC
TYPICAL SCATTERING PARAMETERS
FIGURE 2 -BH, INPUT REFLECTION COEFFICIENT
viruu FREQUENCY
330° 340° 360° 0 IP 20° 30°
FIGURE 3 - S,2, REVERSE TRANSMISSION COEFFICIgNT
variut FREQUENCY
30° 20° 10° 0 350° 340° 330°
320°
220°
M0»
Wft
210° 200° 190° 180° 170° 160° 110°
2!0°
150' 170° 1H° 190° 200° 210°