2N6904 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – N-Channel Logic Level Power MOS Field-Effect Transistors

2N6904
ELECTRICAL CHARACTERISTICS at C«»e Twnptratur* (Tc = 25° C) unless otherwlM specified
CHARACTERISTIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On Voltage
Static Drain-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Thermal ResistanceJunction-to-Case
TEST CONDITIONS
BVoss
ID = 1 mA, Vos = 0
Vos(th)
Vos * VDS, ID = 1 mA
loss
VDS = 160V
TC = 125°C, Vos = 160V
loss
VQS = ±10 V, VDS = 0
Vos(on)»
ID = 5.1 A, VQS = 5 V
ID = 8 A, Vos = 5 V
r0s(on)«
ID = 5.1 A
TC=125°C, I0=5.1 A, Vos=5V
g**
VDS = 5V, ID = 5.1 A
C*.
V,,s = 25 V
C0>>
VGS = 0 V
C,«,
f = 0.1 MHz
Mon)
VOD=100V
t,
ID = 5.1 A
td(off)
RQ«:= Rg. = 15 O
t,
Vas = 5 V
Rftc
LIMITS
MIN.
200
1
—
—
—
—
—
—
„
3
350
75
20
—
—
—
—
—
MAX.
—
2
1
50
100
3.06
5.5
0.6
1.11
12
900
250
100
45
150
135
150
1.67
UNITS
V
V
M
nA
V
ft
mho
PF
ns
°C/W
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
CHARACTERISTIC
Diode Forward Voltage
Reverse Recovery Time
Vsoa
t,.
TEST CONDITIONS
ISD = 8 A
IF = 4 A
diF/dt= 100A//US
* In accordance with JEDEC registration data.
•Pulsed: Pulse duration = 300 fjs, max., duty cycle = 2%.
LIMITS
MIN.
MAX.
0.8
1.6
—
625
UNITS
V
ns