2N439 Datasheet, PDF (2/3 Pages) New Jersey Semi-Conductor Products, Inc. – NPN HIGH FREQUENCY COMPUTER TRANSISTORS

ELECTRICAL DATA
Min. Mode Max. Units
STATIC AND LARGE SIGNAL PARAMETERS
Collector cutoff current,
VCB = 25 V
2
10 jjiAdc
Collector cutoff current,
VCB = 6 V, TA = 75°C
150 nAdc
Emitter cutoff current, l£BO
VEB - 25 V
2
10 liAdc
Emitter cutoff current, IEBO
VEB = 6 V, TA = 75°C
150 jjiAdc
Collector-base breakdown voltage,
1C = 100 \iA
30
Vdc
Collector-emitter breakdown voltage, BVcEO
1C = 300 ^A
20
Vdc
Current gain, hp£
IC = 5 0 mA, VCE = 1.0 V
30
45
Input voltage, VEB
1C = 50 mA, VCE = 1.0 V
.32
.7 Vdc
Saturation resistance, Rg
1C = 50 mA
3
5 ohms
TYPICAL SWITCHING CHARACTERISTICS (Note 3)
Rise time, tr
.5
Fall time, tf
.3
Storage time, ts
.7
LOW FREQUENCY, SMALL SIGNAL PARAMETERS (Note 1)
Current gain, hfe
Input resistance, hib
Input resistance, hie
35
27
1500
HIGH FREQUENCY, SMALL SIGNAL PARAMETERS (Note 2)
Cutoff frequency, iab
Collector capacitance, Cc
Collector base time constant, rb'Cc
Extrinsic base resistance, rb'
5.0
9
2300
220
H.S
ohms
ohms
me
20
ohms