2N4371 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon Controlled Rectifiers

Switching
Criticol rate of rise of on-state current (note 1)
Typical delay time (note 1)
Typical circuit commuted turn-off time (note 2)
di/dt
tj
tq
100A/usec.
3.0 usec.
100 usec.
r J = 125"C
Tj = ^125°C
Note 1: 'TM = 50A, V0 =• VDRM, VGT = 12V open circuit, 20 ohm-0.1 usec. rise time
Note 2: 'TM = 50A, di/dt = 5A/usec.,vR during turn-off interval = 50V min.,
reapplied dv/dt ~ 20V/usec., linear to rated VDRM, VGT •= 0V
Max, gate voltage to trigger
Max. nontriggering gate voltage
Max, gate current to trigger
Max. peak gate power
Average gate power
Max. peak gate current
Max. peak gate voltage (forward)
Max. peak gate voltage (reverse)
Triggering
VGT
VGD
'GT
PGM
PG(AV)
' GM
VGM
3.0V
0.25V
100mA
15W
3.0W
4.0A
10V
5.0V
TJ = 25" C
Tj = 125°C
Tj - 25°C
tp = 10 usec.
Max. leakage current
Max. reverse leakage
Critical rate of rise of off-state voltage
Blocking
'DRM.'RRM
'RRM.'DRM
dv/dt
10mA
100 /JA
lOOV/usec.
TJ =i25°c tt VDRM.VRRM
Tj =25°C & VRRM.VRRM
TJ =125°C