2N4348 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Hometaxial-Base, High-Current Silicon N-P-N Transistors

ELECTRICAL CHARACTERISTICS, At Case Temperature ( ! = 25°C Unless Otherwise Specified
TEST CONDITIONS
LIMITS
CHARACTERISTIC
SYMBOL
SoHactor-Cutoff Current:
With emitter open, VCB= 1 40 V ^•ceo
With base emitter
junction reverie biased
'CEX
With base-emitter
junction reverse biased
andTc = 150°C
With bate open
Emitter-Cutoff Current
'CEX
'CEO
IEBO
DC Forward Current
Transfer Ratio
hFE
VOLTAGE CURRENT
V dc
A dc
2N434B
VCE VBE 'C
Mm. Max.
'B
-
2N3773
Min. M»x
2
2N6259
UNITS
Mm. Mix.
-
mfl
120 - ,5
110 - .5
150 - .5
120
b
140 - .5
150 - .6
100
170
-^ 0
4
6»
4
8»
2
8»
4
10»
4
16»
1
-
?
10
10
mA
0.2
mA
4
20
10
2
mA
5
5
7
mA
15 60
10
15 60
5
15 60
10
Collector-to-Emitter
Sustaining Voltage;
VCEX**US'
1 5 O.I
140
160
i ;o
V
With base-emitter junction
reverse- biased IR0E 10OiJ)
With external base-to-emntef
resistance (RBE* " tOOii
Vc£R(ftus)
02»
140
.150
160
V
With base open
VCEOlsusl
02»
0 120
140
150
V
Jase to Emitier Voltage
4
5»
7
4
VflE
?
Ba
8"
-
27
-
7
V
4
10»
3
Collector-To Emitter
Saturation Voltage
vCF<tia''
&» 0 6
1
8» O R
10' 1 75
14
?
1
V
16» j 2
4
25
Second- BieaV down
Collector Current
With base forward-biased and
'S/hb
SO
1 -s nomepet'tive pulse
100
A
15
15
15
Second Breakdown Eneigy
With base reverse-biased and
ES'hc
. 1.5 2.5
0 \K
0 \K
0 125
.1
L = 40 mH, RBE - 100SI
Magnitude of Common EmillPr.
Small-Signal, Short Cucun.
Forward Currenl Transter
|Hfe|
4
1
t
t
4
Ratio If * 50kHz!
Common-Emitter, Small
Signal. Short-Circuit.
Forward Current Transfer
hft
4
l
40
40
40
Ratio (f = 1 kHz)
Thermal Resistance
junction-io-Case
R,JC
1 46
117
07
°C/W