ZTE1.5 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Voltage Stabilizers

<£tml-Confluatoi ZPiotLtat*., Una.
20 STERN AVE.
SPRINGFIELD. NEW JERSEY 07081
U.SA
TELEPHONE: [phone]
[phone]
FAX [phone]
ZTE1.5thruZTE5.1
Voltage Stabilizers
DO-204AH (DO-35 Glass)
oo
o
03
m.
g
x_ra
, max. 0.079 (2.0)
r"
... Cathode
Mark
Dimensions are in inches
and (millimeters)
max. 0.020 (0.52)
Features
• Silicon Stabilizer Diodes
• Monolithic integrated analog circuits designed for
small power stabilizer and limitation circuits,
providing low dynamic resistance and high-quality
stabilization performance as well as low noise. In the
reverse direction, these devices show the behavior of
forward-biased silicon diodes.
• The end of the ZTE device marked with the cathode ring
is to be connected: ZTE1.5 and ZTE2 to the negative
pole of the supply voltage; ZTE2.4 thru ZTE5.1 to the
positive pole of the supply voltage.
• These diodes are also available in MiniMELF case with
the type designation LL1.5 ... LL 5.1.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging codes/options:
D7/10K per 13" reel (52mm tape), 20K/box
D8/10K per Ammo tape, (52mm tape), 20K/box
(TA = 25°C unless otherwise noted)
Parameter
Operating Current (see Table "Characteristics")
Inverse Current
Power dissipation at Tamb = 25°C
Junction temperature
Storage temperature range
Symbol
IF
Plot
Tj
Ts
Value
100
300<'>
150
-55 to +150
Unit
mA
mW
°G
°C
Electrical and Thermal Characteristics (TA = 25"C unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Forward Voltage at IF = 10 mA
VF
_
_
Temperature Coefficient of the
ZTE1 .5, ZTE2
avz
-26
stabilized voltage at Iz = 5 mA
ZTE2.4, ZTE5.1
«vz
_
-34
Thermal resistance junction to ambient air
RflJA
-
-
Max.
1.1
-
400'1>
Unit
V
10^/°C
iQ-^rc
°c/w
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