WW459 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – N-Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, L/nc.
TELEPHONE: [phone]
[phone]
FAX: [phone]
WW459
N-Channel Silicon JFET Transistor
AF Amplifier/Chopper/Switch
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain-Source Voltage, VDS
•
Drain-Gate Voltage, VDG
Gate-Source Voltage, VGS
Drain Current, ID
Total Device Dissipation (TA = +25°C), PD
Derate Above 25°C
Operating Junction Temperature, Tj
Storage Temperature Range, Tstg
50V
50V
-50V
10mA
SOOmW
2mW/°C
+175°C
-55° to +200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
OFF Characteristics
Gate-Source Breakdown Voltage
Gate Reverse Current
V(BR)GSS ^{!G = -1nA, VDS = 0}
-50
'GSS ^{VGS = -30V, VDS = 0}
-
VGS = -30V, VDS = 0, TA = +150°C -
--
- -0.1
- -100
Gate-Source Cutoff Voltage
Gate-Source Voltage
ON Characteristics
VGS(off) ID = O.SnA, VDS = 15V
VGS ^{!D = 200nA, VDS = 15V}
- - -6
-1 - -4
Zero-Gate-Voltage Drain Current
loss | VDS = 15V, VGS = 0, Note 1
2 - 10
Small-Signal Characteristics
Forward Transfer Admittance
lYfsl ^{VDs = 15V,VGs = 0,f=1kHz,}
Motel
3000 — 6500
Output Admittance
Input Capacitance
Reverse Transfer Capacitance
VDS = 15V- VGS = 0, f = 100MHz 3000 ^{- -}
IVosI ^{VDS = 15V, VGS = 0,f= 1kHz,}
Note 1
— — 20
ciss ^{VDS = 15V,VGS = 0,f=1MHz}
--6
Crss VDs= 15V, VGS = 0, f=1MHz
- -3
Note 1. Pulse Test: Pulse Width < 100ms, Duty Cycle < 10%.
Unit
V
nA
nA
V
V
mA
jimho
urn ho
(j.mho
PF
PF
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