VP0808B Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – P-Channel Enhancement-Mode MOSFET Transistors

£s.m.i-donau.ckoi ^Pioaueti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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VP0808B/L/M, VP1008B/L/M
P-Channel Enhancement-Mode MOSFET Transistors
Product Summary
Part Number
VP0808B
VP0808L
VP0808M
VP1008B
VP1008L
VP1008M
V(BR)DSS Min (V)
-80
-100
"•DS(on) Ma« (&)
5 @ VGS = -lO V
5@ VGS = -10 V
5@VGS = -lOV
5@ VGS = -10 V
5 @ Vos = -10 V
5 @ VGS = -lO V
VGS(th) (V)
-2 to -4.5
~2 to -4.5
-2 to -4.5
-2 to -4.5
-2 to -4.5
-2 to -4.5
Features
High-Side Switching
Low Cm-Resistance: 2.5 Q
Moderate Threshold: -3.4 V
Fast Switching Speed: 40 ns
Low Input Capacitance: 75 pF
Benefits
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Switching
• Easily Driven Without Buffer
ID (A)
-0.88
-0.28
-0.31
-0.79
-0.28
-0.31
Applications
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Power Supply, ConverterCircuits
Motor Control
TO-205AD (TO-39)
(Case Drain)
TO-226AA
(TO-92)
TO-237
(Tab Drain)
VP0808B
VP1008B
VP0808L
VP1008L
VP0808M
VP1008M
Top View
Top View
Top View
Absolute Maximum Ratings (TA= 25°C Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^TA=25°C
(Tj= 150°C)
TA= 100° C
Pulsed Drain Current8
Power Dissipation
TA=25CC
TA= 100°C
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Operating Junction and
Storage Temperature Range
Symbol
VDS
VGS
ID
'DM
PD
RthJA
RthJC
Tj> Tstg
VP0808Bb
-80
±20
-0.88
-0.53
-3
6.25
2.5
20
VP0808L
-80
±30
-0.28
-0.17
-3
0.8
0.32
156
VP0808M
-80
±30
-0.31
-0.20
-3
1
0.4
125
VP1008Bb
100
±20
-0.79
-0.53
-3
6.25
2.5
20
VP1008L
-100
±30
-0.28
-0.17
-3
0.8
0.32
156
-55 to 150
VP1008M
-100
±30
-0.31
-0.20
-3
1
0.4
125
Unit
V
A
W
"C/W
°c
Notes
a. Pulse width limited by maximum junction temperature.
b. Reference case for all temperature testing.
Quality Semi-Conductors