VN67 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – N-Channel Enhancement-Mode MOS Transistors

tzSztni-Gonauctoi iJ^ioaucts., One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
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FAX: [phone]
PRODUCT SUMMARY
PART V(BP)OSS ros(ON) ID
NUMBER (V)
<n) (A) ^PACKAGE
VN67AB
60
3.5 0.79 TO-205AD
VN67 SERIES
N-Channel Enhancement-Mode MOS Transistors
TO-205AD (TO-39)
BOTTOM VIEW
VN67AD
60
3.5 1.58 TO-220
VN67AFD 60
3.5 1.37 TO-220SD
Performance Curves: VNDQ06 (See Section 7)
1 SOURCE
2 GATE
3 DRAIN & CASE
TO-220/TO-220SD
TOP VIEW
TO-220
1 GATE
2 & TAB - DRAIN
3 SOURCE
TO-220SD
1 SOURCE
2 GATE
3 & TAB - DRAIN
1 23
ABSOLUTE MAXIMUM RATINGS (Tc » 25°C unless otherwise noted)2
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VQS
Continuous Drain Current
Pulsed Drain Current1
Tc= 25°C
Tc= 100°C
Power Dissipation
Tc= 25°C
TC = 100°C
Operating Junction and Storage Temperature
Lead Temperature
(1/16" from case for 10 seconds)
ID
IDM
PD
T|. Tstg
TL
VN67AB VN67AD VN67AFD UNITS
60
60
60
V
±20
±30
±30
0.79
1.58
1,37
0.5
1
0.87
A
3
3
3
5
20
15
2
8
W
6
-55 to 150
"C
300
THERMAL RESISTANCE
THERMAL RESISTANCE
SYMBOL VN67AB
Junction-to-Case
RthJC
25
'Pulse width limited by maximum Junction temperature
2 Absolute maximum ratings have been revised from previous data sheet
VN67AD
6.25
VN67AFD UNITS
8.3
"C/W
NJ Serni-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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