VN66 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – VN66 SERIES

20 STERNAVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One,
TELEPHONE: [phone]
[phone]
FAX: [phone]
VN66 SERIES
N-Channel Enhancement-Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)DSS ros(ON) ID
NUMBER (V)
(n> (A)
PACKAGE
VN66AD
60
3
1.7 TO-220
TO-220/TO-220SD
TOP VIEW
VN66AFD 60
3
1,46 TO-Z20SD
Performance Curves: VNDQ06 (See Section 7)
TO-220
1 GATE
2 & TAB - DRAIN
3 SOURCE
1 23
TO-220SD
1 SOURCE
2 GATE
3 & TAB - DRAIN
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted)2
PARAMETERS/TEST CONDITIONS
SYMBOL
VN66AD
VN86AFD
UNITS
Drain-Source Voltage
Gate-Source Voltage
VDS
60
VQS
±30
60
V
±30
Continuous Drain Current
Pulsed Drain Current1
TC=25°C
l_ID.,
1,7
Tc = WC
1
I DM
3
1.46
0.92
A
3
Power Dissipation
Tc= 25°C
20
PD
Tc = 100°C
8
15
W
6
Operating Junction and Storage Temperature
Tj. Tstg
-55 to 150
Lead Temperature
(1/16" from case for 10 seconds)
TL
"C
300
THERMAL RESISTANCE
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RthJC
'Pulse width limited by maximum junction temperature.
2Absolute maximum ratings have been revised.
VN66AD
6.25
VN66AFD
8.3
UNITS
"C/W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors