VN35AK Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – N-Channel Enhancement-mode Vertical Power MOSFET

tSztni-donductoi ^Ptoaueti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
[phone]
VN35AK, VN66AK, VN67AK,
VN98AK, VN99AK
n-Channel Enhancement-mode
Vertical Power MOSFET
FEATURES
• High speed, high current switching
• High gain-bandwidth product
• Inherently temperature stable
• Extended safe operating area
• Simple DC biasing
• Requires almost zero current drive
APPLICATIONS
• High current analog switches
• RF power amplifiers
• Laser diode pulsers
• Line drivers
• Logic buffers
• Pulse amplifiers
ABSOLUTE MAXIMUM RATINGS
(TA = 25° C unless otherwise noted)
Drain-source Voltage
VN35AK
35V
VN66AK, VN67AK
60V
VN98AK, VN99AK
9QY
Drain-gate Voltage
VN35AK
35V
VN66AK, VN67AK
60V
VN98AK. VN99AK
90V
Continuous Drain Current (see note 1)
1.2A
Peak Drain Current (see note 2)
3.0A
Gate-source Forward Voltage
,
+30V
Gate-source Reverse Voltage
-30V
Thermal Resistance, Junction to Case
20°C/W
Continuous Device Dissipation at (or below)
25'C Case Temperature
6.25W
Linear Derating Factor
50mW/°C
Operating Junction
Temperature Range
-55 to -H50°C
Storage Temperature Range
-55 to +150°C
Lead Temperature
(1/16 in. from case for 10 sec)
+300°C
Note 1. TC = 25°C; controlled by typical rDS(sn) and maximum
power dissipation.
Note 2. Pulse width 80Msec, duty cycle 10%.
Note 3. The Drain-source diode is an integral part of the MOSFET
structure.
SCHEMATIC DIAGRAM
DRAIN
Q
(OUTLINE DWG. TO-39)
GATE
O
GATE
Body Internally connected to tourc*.
Drain common lo C«M.
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