VN30AB Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – N-Channel Enhancement-mode Vertical Power MOSFET

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
VN3OAB, VN35AB, VN67AB,
VN89AB, VN90AB
n-Channel Enhancement-mode
Vertical Power MOSFET
FEATURES
• High speed, high current switching
• Current sharing capability when paralleled
• Directly Interface to CMOS, DTL, TTL. logic
• Simple DC biasing
• Extended safe operating area
• Inherently temperature stable
APPLICATIONS
• Switching power supplies
• DC to DC inverters
• CMOS and TTL to high current Interface
1 • Line drivers
• Logic buffers
• Pulse amplifiers
ABSOLUTE MAXIMUM RATINGS
(TA = 25° C unless otherwise noted)
Drain-source Voltage
VN30AB. VN35AB
35V
VIM67A8
50V
VN89AB
80V
VN90AB
90V
Drain-gate Voltage
VN30AB, VN35AB
35V
VN67AB
60V
VN89AB
80V
VN9QAB
90V
Continuous Drain Current (see note 1)
1.2A
Peak Drain Current (see note 2}
3.0A
Continuous Forward Gate Current
2.0mA
Peak-gate Forward Current
100mA
Peak-gate Reverse Current
100mA
Gate-source Forward (Zener) Voltage
+15V
Gate-source Reverse (Zener) Voltage.
Thermal Resistance, Junction to Case
-0.3V
20°C/W
Continuous Device Dissipation at (or below)
25°C Case Temperature
6.25W
Linear Derating Factor
50mW/°C
Operating Junction
Temperature Range
-55 to +150°C
Storage Temperature Range
-55 to +150°C
Lead Temperature
(1/16 in. from case for 10 sec)
+300°C
SCHEMATIC DIAGRAM (OUTLINE DWG. To-39)
DRAIN
o
GATEO
Body Internally connected to source.
Drain common to caie.
SOURCC
Note 1. Tc = 25°C; controlled by typical rosion) and maximum
power dissipation.
Not* 2. Pulse width 80/*sec, duty cycle 1.0%,
Not* 3. The Drain-source diode is an integral part of the MOSFET
structure.
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