VN2222KM Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – N-Channel Enhancement Mode MOSPOWER

J. U
I/ roaucti, One..
20 STERN AVE.
SPRINGFIELD. NEW JERSEY 07081
USA
VN2222KM
TELEPHONE: [phone]
[phone]
FAX: [phone]
N-Channel Enhancement Mode
MOSPOWER
APPLICATIONS
• Switching Regulators
• Converters
• Motor Drivers
PIN 1 - Source
PIN 2 - Gate
PIN 3 & TAB- Drain
PRODUCT SUMMARY
Part
Number
VN10KM
BVDSS
Volts
60
rDS(ON)
(ohms)
5
VN2222KM
60
7.5
Package
TO- 237
TO- 237
TO-237
123
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted)
Parameter
VN10KM
VN2222KM
VDS
VDGR
I D @ T C = 25° C
ID@TC = 100° c
'DM
VGS
PD
PD
Junction to Case
Drain-Source Voltage
Drain-Gate Voltage (RQS = 1Mn>
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Gate-Source Voltage
Max Continuous Power Dissipation
Max Pulse^ Power Dissipation
Linear Derating Factor
60
60
±0.3
±0.2
±1
+ 15, -0.3
1
3.9
0.031
60
60
±0.25
±0.16
±1
+ 15, -0.3
1
3.9
0.031
Junction to
Ambient
Linear Derating Factor
0.008
0.008
Tj
Operating and
Tstg
Storage Temperature Range
-55 To +150
-55 To +150
Lead Temperature 11 /16" from case for 1 0 sees.}
300
300
1 Pulse Test: Pulsewidth < 300Msec, Duty Cycle < 2%
2 1 Sec ContinuousPower Single Pulse
Units
V
V
A
A
A
V
W
W/° C
W/° C
°C
°c
Power Derating
4.8
<IK •
3.2
5 2.4
1.6
0.8
32°C/W
0 25 50 75 100 125 150 175
Tc - CASE TEMPERATURE (°C)