VN1310 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – N-Channel Enhancement-Mode

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line.
N-Channel Enhancement-Mode
Vertical DMOS FETs
VN1304
VN1306
VN1310
Ordering Information
BVDSS/
BVDGS
n
•^DSfON)
(max)
'o(ON)
(min)
40V
8.00
0.5A
60V
8.00
0.5A
100V
8.00
0.5A
Order Number / Package
TO-39
TO-92
—
—
VN1306N2
—
—
VN1310N3
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C|SS and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
BV,_DSS
BV,_DOS
±20V
-55°Cto+150°C
300°C
* Distance of 1.6 mm from case for 10 seconds.
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Package Options
TO-39
Case: DRAIN
SOD
TO-92
Note: See Package Outline section for dimensions.